Selectively excited blue luminescence in heavily Mg doped p-type GaN

PDF Version Also Available for Download.

Description

The emission at {approx}2.8 eV from heavily doped p-GaN, known as the blue luminescence (BL), has been studied by selective excitation using a dye laser tunable between 2.7-3.0 eV. The peak position and intensity of the BL are found to exhibit an unusual dependence on the excitation photon energy. We have explained our results with a shallow-donor and deep-acceptors pair recombination model which includes potential fluctuations induced by heavy doping. We found a ''critical energy'' of {approx}2.8 eV for the BL. Electron-hole pairs with energies above this energy are able to achieve quasi-thermal equilibrium while those with energies below 2.8 ... continued below

Physical Description

4 pages

Creation Information

Colton, John S. & Yu, Peter Y. December 31, 2000.

Context

This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this article can be viewed below.

Who

People and organizations associated with either the creation of this article or its content.

Sponsor

Publisher

Provided By

UNT Libraries Government Documents Department

Serving as both a federal and a state depository library, the UNT Libraries Government Documents Department maintains millions of items in a variety of formats. The department is a member of the FDLP Content Partnerships Program and an Affiliated Archive of the National Archives.

Contact Us

What

Descriptive information to help identify this article. Follow the links below to find similar items on the Digital Library.

Description

The emission at {approx}2.8 eV from heavily doped p-GaN, known as the blue luminescence (BL), has been studied by selective excitation using a dye laser tunable between 2.7-3.0 eV. The peak position and intensity of the BL are found to exhibit an unusual dependence on the excitation photon energy. We have explained our results with a shallow-donor and deep-acceptors pair recombination model which includes potential fluctuations induced by heavy doping. We found a ''critical energy'' of {approx}2.8 eV for the BL. Electron-hole pairs with energies above this energy are able to achieve quasi-thermal equilibrium while those with energies below 2.8 eV are strongly ''localized''.

Physical Description

4 pages

Notes

OSTI as DE00789173

Source

  • 2000 International Semiconducting and Insulating Materials Conference, Canberra (AU), 07/03/2000--07/07/2000

Language

Item Type

Identifier

Unique identifying numbers for this article in the Digital Library or other systems.

  • Report No.: LBNL--48895
  • Grant Number: AC03-76SF00098
  • Office of Scientific & Technical Information Report Number: 789173
  • Archival Resource Key: ark:/67531/metadc721120

Collections

This article is part of the following collection of related materials.

Office of Scientific & Technical Information Technical Reports

What responsibilities do I have when using this article?

When

Dates and time periods associated with this article.

Creation Date

  • December 31, 2000

Added to The UNT Digital Library

  • Sept. 29, 2015, 5:31 a.m.

Description Last Updated

  • April 4, 2016, 4:28 p.m.

Usage Statistics

When was this article last used?

Yesterday: 0
Past 30 days: 0
Total Uses: 3

Interact With This Article

Here are some suggestions for what to do next.

Start Reading

PDF Version Also Available for Download.

Citations, Rights, Re-Use

Colton, John S. & Yu, Peter Y. Selectively excited blue luminescence in heavily Mg doped p-type GaN, article, December 31, 2000; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc721120/: accessed August 17, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.