Electroabsorption and Transport Measurements and Modeling Research in Amorphous Silicon Based Solar Cells; Annual Report; 24 March 1999-23 March 2000

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We have performed computer calculations to explore effects of the p/i interface on the open-circuit voltage in a-Si:H based pin solar cells. The principal conclusions are that interface limitation can occur for values of VOC significantly below the built-in potential of VBI of a cell, and that the effects can be understood in terms of thermionic emission of electrons from the intrinsic layer into the p-layer. We compare measurements of VOC and electroabsorption estimates of VBI with the model calculations. We conclude that p/i interface limitation is important for current a-Si:H based cells, and that the conduction band offset between ... continued below

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Schiff, E.A.; Kopidakis, N.; Lyou, J.; Rane, S.; Yuan, Q. & Zhu, K. (Syracuse University) February 14, 2001.

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We have performed computer calculations to explore effects of the p/i interface on the open-circuit voltage in a-Si:H based pin solar cells. The principal conclusions are that interface limitation can occur for values of VOC significantly below the built-in potential of VBI of a cell, and that the effects can be understood in terms of thermionic emission of electrons from the intrinsic layer into the p-layer. We compare measurements of VOC and electroabsorption estimates of VBI with the model calculations. We conclude that p/i interface limitation is important for current a-Si:H based cells, and that the conduction band offset between the p and i layers is as important as the built-in potential for future improvements to VOC.

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  • Other Information: PBD: 14 Feb 2001

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  • Report No.: NREL/SR-520-29504
  • Grant Number: AC36-99GO10337
  • DOI: 10.2172/777315 | External Link
  • Office of Scientific & Technical Information Report Number: 777315
  • Archival Resource Key: ark:/67531/metadc720725

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  • February 14, 2001

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  • Sept. 29, 2015, 5:31 a.m.

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  • March 28, 2016, 1:35 p.m.

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Schiff, E.A.; Kopidakis, N.; Lyou, J.; Rane, S.; Yuan, Q. & Zhu, K. (Syracuse University). Electroabsorption and Transport Measurements and Modeling Research in Amorphous Silicon Based Solar Cells; Annual Report; 24 March 1999-23 March 2000, report, February 14, 2001; Golden, Colorado. (digital.library.unt.edu/ark:/67531/metadc720725/: accessed September 26, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.