Comprehensive Research on Stability of Amorphous Silicon and Alloy Materials and Devices

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In this report, the authors describe the work done to improve the material and device properties of a-Si:H and a-(Si,Ge):H alloys prepared using electron cyclotron resonance (ECR) plasma deposition and to understand the growth chemistry. Major results were obtained in the following areas: (1) Influence of plasma chemistry on properties and stability of a-Si:H single-junction solar cells; (2) Fabrication of good-quality tandem-junction cells. The authors made tandem-junction a-Si/a-Si cells with excellent voltages and fill factors using the H-ECR process; (3) Growth of high-quality a-(Si,Ge):H films using the ECR deposition process; (4) Fabrication of single-junction devices in a-(Si,Ge):H for diagnosing the ... continued below

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Dalal, V. K.; Han, K.; Maxson, T.; Girvan, R.; Kaushal, S.; DeBoer, S. et al. September 29, 2000.

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In this report, the authors describe the work done to improve the material and device properties of a-Si:H and a-(Si,Ge):H alloys prepared using electron cyclotron resonance (ECR) plasma deposition and to understand the growth chemistry. Major results were obtained in the following areas: (1) Influence of plasma chemistry on properties and stability of a-Si:H single-junction solar cells; (2) Fabrication of good-quality tandem-junction cells. The authors made tandem-junction a-Si/a-Si cells with excellent voltages and fill factors using the H-ECR process; (3) Growth of high-quality a-(Si,Ge):H films using the ECR deposition process; (4) Fabrication of single-junction devices in a-(Si,Ge):H for diagnosing the material; and (5) Graded-gap cells in a-(Si,Ge):H. Good devices were produced using a graded-gap I-layer. In summary, the most important finding from this research has been that plasma chemistry plays a very important role in determining the properties of the materials, particularly the properties of the a-(Si,Ge):H alloy system. Even in a-Si:H, plasma chemistry plays a role in determining stability. This result suggests that by deliberately changing the chemistry of deposition, one may be able to further improve the a-(Si,Ge):H materials system and make its properties comparable to the properties of a-Si:H. The ECR reactor has proved to be a very useful chemical tool, with excellent control over growth chemistry.

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  • Other Information: PBD: 29 Sep 2000

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  • Report No.: NREL/SR-520-28989
  • Grant Number: AC36-99GO10337
  • DOI: 10.2172/765093 | External Link
  • Office of Scientific & Technical Information Report Number: 765093
  • Archival Resource Key: ark:/67531/metadc720477

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  • September 29, 2000

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  • Sept. 29, 2015, 5:31 a.m.

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  • March 31, 2016, 6:10 p.m.

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Dalal, V. K.; Han, K.; Maxson, T.; Girvan, R.; Kaushal, S.; DeBoer, S. et al. Comprehensive Research on Stability of Amorphous Silicon and Alloy Materials and Devices, report, September 29, 2000; Golden, Colorado. (digital.library.unt.edu/ark:/67531/metadc720477/: accessed September 23, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.