Post-growth thermal treatment of the InAs/GaAs quantum dots

PDF Version Also Available for Download.

Description

The effect of post-growth thermal treatment of the InAs/GaAs quantum dots is investigated in this work. The photoluminescence (PL) and transmission electron microscopy (TEM) studies of samples annealed at temperatures up to 950 degrees C are presented. A complete dissolution of QDs and substantial broadening of the wetting layer (WL) can be seen from TEM. We propose that the thermally induced modification of the WL rather than QDs can be responsible for a blue-shift and narrowing of PL peaks in structures containing InAs/GaAs QDs.

Physical Description

vp.; OS: OS 8.0

Creation Information

Jasinski, J.; Babinski, A.; Bozek, R. & Baranowski, J.M. November 22, 2000.

Context

This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this article can be viewed below.

Who

People and organizations associated with either the creation of this article or its content.

Publisher

Provided By

UNT Libraries Government Documents Department

Serving as both a federal and a state depository library, the UNT Libraries Government Documents Department maintains millions of items in a variety of formats. The department is a member of the FDLP Content Partnerships Program and an Affiliated Archive of the National Archives.

Contact Us

What

Descriptive information to help identify this article. Follow the links below to find similar items on the Digital Library.

Description

The effect of post-growth thermal treatment of the InAs/GaAs quantum dots is investigated in this work. The photoluminescence (PL) and transmission electron microscopy (TEM) studies of samples annealed at temperatures up to 950 degrees C are presented. A complete dissolution of QDs and substantial broadening of the wetting layer (WL) can be seen from TEM. We propose that the thermally induced modification of the WL rather than QDs can be responsible for a blue-shift and narrowing of PL peaks in structures containing InAs/GaAs QDs.

Physical Description

vp.; OS: OS 8.0

Notes

OSTI as DE00771942

Source

  • The 11th International Semiconducting and Insulating Materials Conference (SIMC-XI 2000), Canberra (AU), 07/03/2000--07/07/2000

Language

Item Type

Identifier

Unique identifying numbers for this article in the Digital Library or other systems.

  • Report No.: LBNL--46982
  • Grant Number: AC03-76SF00098
  • Office of Scientific & Technical Information Report Number: 771942
  • Archival Resource Key: ark:/67531/metadc720460

Collections

This article is part of the following collection of related materials.

Office of Scientific & Technical Information Technical Reports

What responsibilities do I have when using this article?

When

Dates and time periods associated with this article.

Creation Date

  • November 22, 2000

Added to The UNT Digital Library

  • Sept. 29, 2015, 5:31 a.m.

Description Last Updated

  • April 5, 2016, 5:05 p.m.

Usage Statistics

When was this article last used?

Yesterday: 0
Past 30 days: 0
Total Uses: 2

Interact With This Article

Here are some suggestions for what to do next.

Start Reading

PDF Version Also Available for Download.

Citations, Rights, Re-Use

Jasinski, J.; Babinski, A.; Bozek, R. & Baranowski, J.M. Post-growth thermal treatment of the InAs/GaAs quantum dots, article, November 22, 2000; California. (digital.library.unt.edu/ark:/67531/metadc720460/: accessed September 22, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.