Incorporation of nitrogen in conventional III-V compound semiconductors to form III-N-V alloys leads to a splitting of the conduction band into two nonparabolic sub-bands. The splitting can be described in terms of an anticrossing interaction between a narrow band of localized nitrogen states and the extended conduction-band states of the semiconductor matrix. The downward shift of the lower sub-band edge is responsible for the N-induced reduction of the fundamental band-gap energy. The modification of the conduction-band structure profoundly affects the optical and electrical properties of the III-N-V alloys.
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Incorporation of nitrogen in conventional III-V compound semiconductors to form III-N-V alloys leads to a splitting of the conduction band into two nonparabolic sub-bands. The splitting can be described in terms of an anticrossing interaction between a narrow band of localized nitrogen states and the extended conduction-band states of the semiconductor matrix. The downward shift of the lower sub-band edge is responsible for the N-induced reduction of the fundamental band-gap energy. The modification of the conduction-band structure profoundly affects the optical and electrical properties of the III-N-V alloys.
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Walukiewicz, W.; Shan, W.; Ager, J. W., III; Chamberlin, D. R.; Haller, E. E. (Lawrence Berkeley National Laboratory); Geisz, J. F. et al.Nitrogen-Induced Modification of the Electronic Structure of Group III-N-V Alloys: Preprint,
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April 1, 1999;
Golden, Colorado.
(https://digital.library.unt.edu/ark:/67531/metadc719897/:
accessed March 19, 2024),
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