CIS-Type PV Device Fabrication by Novel Techniques; Phase II Subcontract Report 1 July 1999--31 June 2000

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The R and D program at ISET is centered on development of a novel, dispersion-based route to the deposition of precursor thin films that are converted to CIS-type absorbers through high temperature reactions at or close to atmospheric pressure. The goal of the current research program at ISET is to bring a non-vacuum processing route for CIS closer to commercialization by improving the device efficiency through an increase in absorber bandgap. The basic processing approach involves first synthesizing a powder containing the oxides of copper, indium and gallium. A dispersion (ink) is prepared from the starting powder by mechanical milling ... continued below

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Fisher, M.L. & Kapur, V.K. (International Solar Electric Technology, Inc.) January 22, 2001.

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Description

The R and D program at ISET is centered on development of a novel, dispersion-based route to the deposition of precursor thin films that are converted to CIS-type absorbers through high temperature reactions at or close to atmospheric pressure. The goal of the current research program at ISET is to bring a non-vacuum processing route for CIS closer to commercialization by improving the device efficiency through an increase in absorber bandgap. The basic processing approach involves first synthesizing a powder containing the oxides of copper, indium and gallium. A dispersion (ink) is prepared from the starting powder by mechanical milling or sonication. This ink is then deposited onto the glass/moly substrate as a thin precursor (3-4 {micro}m) and converted to a metallic alloy film by reaction in a hydrogen atmosphere. Controlled synthesis of starting powders and proper reduction results in reasonably smooth, metallic precursor films similar to those produced by sputtering or evaporation. From this point the processing is similar to that in the other two-stage techniques, with the metallic film being reacted in H2Se to form the final photovoltaic absorber, followed by CdS and TCO deposition.

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  • Other Information: PBD: 22 Jan 2001

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  • Report No.: NREL/SR-520-29606
  • Grant Number: AC36-99GO10337
  • DOI: 10.2172/776184 | External Link
  • Office of Scientific & Technical Information Report Number: 776184
  • Archival Resource Key: ark:/67531/metadc719292

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  • January 22, 2001

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  • Sept. 29, 2015, 5:31 a.m.

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  • March 31, 2016, 2:02 p.m.

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Fisher, M.L. & Kapur, V.K. (International Solar Electric Technology, Inc.). CIS-Type PV Device Fabrication by Novel Techniques; Phase II Subcontract Report 1 July 1999--31 June 2000, report, January 22, 2001; Golden, Colorado. (digital.library.unt.edu/ark:/67531/metadc719292/: accessed September 20, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.