All-vapor processing of P-type tellurium-containing II-VI semiconductor and ohmic contacts thereof

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Description

An all dry method for producing solar cells is provided comprising first heat-annealing a II-VI semiconductor; enhancing the conductivity and grain size of the annealed layer; modifying the surface and depositing a tellurium layer onto the enhanced layer; and then depositing copper onto the tellurium layer so as to produce a copper tellurium compound on the layer.

Physical Description

30 p.

Creation Information

McCandless, Brian E. March 1, 2000.

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This patent is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 62 times, with 4 in the last month. More information about this patent can be viewed below.

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Description

An all dry method for producing solar cells is provided comprising first heat-annealing a II-VI semiconductor; enhancing the conductivity and grain size of the annealed layer; modifying the surface and depositing a tellurium layer onto the enhanced layer; and then depositing copper onto the tellurium layer so as to produce a copper tellurium compound on the layer.

Physical Description

30 p.

Notes

OSTI as DE00770946

Medium: P; Size: 30 pages

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  • Patent File Date: 2000 Mar 01

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  • Report No.: PATENTS-US--A9516686
  • Report No.: subCN: XAK-7-17609-01
  • Grant Number: AC36-99GO10337
  • Grant Number: AC36-83CH10093
  • Office of Scientific & Technical Information Report Number: 770946
  • Archival Resource Key: ark:/67531/metadc719000

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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Creation Date

  • March 1, 2000

Added to The UNT Digital Library

  • Sept. 29, 2015, 5:31 a.m.

Description Last Updated

  • March 12, 2019, 6:30 p.m.

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McCandless, Brian E. All-vapor processing of P-type tellurium-containing II-VI semiconductor and ohmic contacts thereof, patent, March 1, 2000; Golden, Colorado. (https://digital.library.unt.edu/ark:/67531/metadc719000/: accessed September 19, 2019), University of North Texas Libraries, Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.