Influence of dopants on defect formation in GaN

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Influence of p-dopants (Mg and Be) on the structure of GaN has been studied using Transmission Electron Microscopy (TEM). Bulk GaN:Mg and GaN:Be crystals grown by a high pressure and high temperature process and GaN:Mg grown by metal-organic chemical-vapor deposition (MOCVD) have been studied. Structural dependence on growth polarity was observed in the bulk crystals. Spontaneous ordering in bulk GaN:Mg on c-plane (formation of Mg-rich planar defects with characteristics of inversion domains) was observed for growth in the N to Ga polar direction (N polarity). On the opposite site of the crystal (growth in the Ga to N polar direction) ... continued below

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8 pages

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Liliental-Weber, Z.; Jasinski, J.; Benamara, M.; Grzegory, I.; Porowski, S.; Lampert, D.J.H. et al. October 15, 2001.

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Influence of p-dopants (Mg and Be) on the structure of GaN has been studied using Transmission Electron Microscopy (TEM). Bulk GaN:Mg and GaN:Be crystals grown by a high pressure and high temperature process and GaN:Mg grown by metal-organic chemical-vapor deposition (MOCVD) have been studied. Structural dependence on growth polarity was observed in the bulk crystals. Spontaneous ordering in bulk GaN:Mg on c-plane (formation of Mg-rich planar defects with characteristics of inversion domains) was observed for growth in the N to Ga polar direction (N polarity). On the opposite site of the crystal (growth in the Ga to N polar direction) Mg-rich pyramidal defects empty inside (pinholes) were observed. Both these defects were also observed in MOCVD grown crystals. Pyramidal defects were also observed in the bulk GaN:Be crystals.

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8 pages

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OSTI as DE00789183

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  • The 4th International Conference on Nitride Semiconductors, Denver, CO (US), 07/16/2001--07/20/2001

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  • Report No.: LBNL--49034
  • Grant Number: AC03-76SF00098
  • Office of Scientific & Technical Information Report Number: 789183
  • Archival Resource Key: ark:/67531/metadc718944

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  • October 15, 2001

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  • Sept. 29, 2015, 5:31 a.m.

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  • April 4, 2016, 1:17 p.m.

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Liliental-Weber, Z.; Jasinski, J.; Benamara, M.; Grzegory, I.; Porowski, S.; Lampert, D.J.H. et al. Influence of dopants on defect formation in GaN, article, October 15, 2001; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc718944/: accessed August 17, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.