Enhancement of dislocation velocities by stress assisted kink nucleation at the native oxide/SiGe interface

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Experiments have shown that the presence of a thin native oxide layer on the surface of a strained SiGe epilayer causes an order of magnitude increase in dislocation velocities during annealing over those observed in atomically clean samples and during crystal growth. This behavior is explained herein by stress-assisted dislocation kink nucleation at the oxide/epilayer interface. Finite element models are used to estimate the magnitude of stress local to steps at this interface due to both intrinsic and thermal expansion stresses, and dislocation theory is used to determine the resulting increase in single kink nucleation.

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Stach, E. A. & Hull, R. February 15, 2001.

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Experiments have shown that the presence of a thin native oxide layer on the surface of a strained SiGe epilayer causes an order of magnitude increase in dislocation velocities during annealing over those observed in atomically clean samples and during crystal growth. This behavior is explained herein by stress-assisted dislocation kink nucleation at the oxide/epilayer interface. Finite element models are used to estimate the magnitude of stress local to steps at this interface due to both intrinsic and thermal expansion stresses, and dislocation theory is used to determine the resulting increase in single kink nucleation.

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  • Journal Name: Applied Physics Letters; Journal Volume: 79; Journal Issue: 3; Other Information: Journal Publication Date: July 16, 2001

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  • Report No.: LBNL--47483
  • Grant Number: AC03-76SF00098
  • DOI: 10.1063/1.1384904 | External Link
  • Office of Scientific & Technical Information Report Number: 785269
  • Archival Resource Key: ark:/67531/metadc718460

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Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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  • February 15, 2001

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  • Sept. 29, 2015, 5:31 a.m.

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  • April 5, 2016, 4:59 p.m.

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Stach, E. A. & Hull, R. Enhancement of dislocation velocities by stress assisted kink nucleation at the native oxide/SiGe interface, article, February 15, 2001; California. (digital.library.unt.edu/ark:/67531/metadc718460/: accessed November 23, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.