Thin-Film CIGS Photovoltaic Technology: Annual Technical Report-Phase II, 16 April 1999-15 April 2000

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A summary of Energy Photovoltaics' Phase II work includes the following: (1) EPV has demonstrated that it can sputter a Mo back-contact capable of supporting very high efficiency cell processing. Using EPV Mo, NREL has deposited a 17.1% CIGS cell (no AR coating). EPV believes it can identify the signature of ``good'' Mo. The Mo was produced on EPV's 0.43 m{sup 2} pilot-line equipment; (2) EPV has performed compound synthesis for several classes of materials, namely non-Cu precursor materials, Cu-containing materials, and ternary buffer materials. Using a ternary compound synthesized at EPV (ZIS) as an evaporation source material for the ... continued below

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Delahoy, A.E.; Bruns, J.; Ruppert, A.; Akhtar, M.; Chen, L. & Kiss, Z.J. August 24, 2000.

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A summary of Energy Photovoltaics' Phase II work includes the following: (1) EPV has demonstrated that it can sputter a Mo back-contact capable of supporting very high efficiency cell processing. Using EPV Mo, NREL has deposited a 17.1% CIGS cell (no AR coating). EPV believes it can identify the signature of ``good'' Mo. The Mo was produced on EPV's 0.43 m{sup 2} pilot-line equipment; (2) EPV has performed compound synthesis for several classes of materials, namely non-Cu precursor materials, Cu-containing materials, and ternary buffer materials. Using a ternary compound synthesized at EPV (ZIS) as an evaporation source material for the buffer layer, a Cd-free CIGS device has been produced having an efficiency of 11.5% (560 mV, 32.1 mA/cm{sup 2}, FF 64.3%). The ZIS films are photoconductive, and the devices exhibit no dark-light crossover or light soaking effects; (3) EPV initiated the interest of the University of Oregon in capacitance spectroscopy of CIGS devices. An Urbach tail with characteristic energy E0 < 20meV was identified by transient photocapacitance spectroscopy; (4) Small-area CIGS devices were produced in the pilot-line system with an efficiency of 12.0% (581 mV, 30.1 mA/cm{sup 2}, FF 68.7%), and in an R and D-scale system with 13.3% efficiency (569 mV, 34.1 mA/cm{sup 2}, FF 68.1%); (5) An improved linear evaporation source for Cu delivery has been developed and was used for CIGS formation in the pilot-line system. The deposition width is 45 cm. This technological ``tour de force'' allows EPV to build large-area CIGS systems possessing considerable flexibility. In particular, both EPV's FORNAX process and NREL's 3-stage process have been implemented on the pilot line. A CIGS thickness uniformity of 7% over a 40 cm width has been achieved; (6) A 4-head linear source assembly was designed, constructed, and is in use. Flux monitoring is practiced; (7) Large-area CIGS modules were produced with Voc's up to 36.3 V; (8) EPV has started to construct an entirely new CIGS pilot line for scale-up and limited manufacturing purposes. The coating width will be 65 cm; (9) The company's analytical capabilities are currently being upgraded with the installation of ICP and SEM/EDS facilities.

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  • Other Information: PBD: 24 Aug 2000

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  • Report No.: NREL/SR-520-28786
  • Grant Number: AC36-99GO10337
  • DOI: 10.2172/763520 | External Link
  • Office of Scientific & Technical Information Report Number: 763520
  • Archival Resource Key: ark:/67531/metadc718004

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  • August 24, 2000

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  • Sept. 29, 2015, 5:31 a.m.

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  • March 31, 2016, 8:20 p.m.

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Delahoy, A.E.; Bruns, J.; Ruppert, A.; Akhtar, M.; Chen, L. & Kiss, Z.J. Thin-Film CIGS Photovoltaic Technology: Annual Technical Report-Phase II, 16 April 1999-15 April 2000, report, August 24, 2000; Golden, Colorado. (digital.library.unt.edu/ark:/67531/metadc718004/: accessed October 20, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.