Pressure dependence of defect emissions and the appearance of pressure-induced deep centers in chalcopyrite alloys AgxCu1-xGaS2

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We present the pressure dependence of the defect emissions in the chalcopyrite alloy semiconductor Ag{sub x}Cu{sub 1-x}GaS{sub 2} for values of the alloy concentration x varying between 0 and 1. A large variation in the pressure coefficients of the different defect emissions with x was found. In one alloy concentration x=0.25 deep levels were found to appear under pressure. Plausible explanations of our results have been proposed.

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12 pages

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Choi, In-Hwan & Yu, Peter Y. December 31, 2000.

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Description

We present the pressure dependence of the defect emissions in the chalcopyrite alloy semiconductor Ag{sub x}Cu{sub 1-x}GaS{sub 2} for values of the alloy concentration x varying between 0 and 1. A large variation in the pressure coefficients of the different defect emissions with x was found. In one alloy concentration x=0.25 deep levels were found to appear under pressure. Plausible explanations of our results have been proposed.

Physical Description

12 pages

Notes

OSTI as DE00788071

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  • 9th International Conference on High Pressure Semiconductor Physics, Sapporo (JP), 09/24/2000--09/28/2000

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  • Report No.: LBNL--48892
  • Grant Number: AC03-76SF00098
  • Office of Scientific & Technical Information Report Number: 788071
  • Archival Resource Key: ark:/67531/metadc717858

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  • December 31, 2000

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  • Sept. 29, 2015, 5:31 a.m.

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  • April 4, 2016, 2:08 p.m.

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Choi, In-Hwan & Yu, Peter Y. Pressure dependence of defect emissions and the appearance of pressure-induced deep centers in chalcopyrite alloys AgxCu1-xGaS2, article, December 31, 2000; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc717858/: accessed September 20, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.