Atomic Scale Structure of Ultrathin Magnetic Multilayers and Correlation with Resistance and Giant Magnetoresistance and Spin-Dependent Tunneling

PDF Version Also Available for Download.

Description

ORNL's advanced characterization capabilities were used to determine the physical and chemical structure of magnetic multilayer films intended for application in non-volatile magnetic random access memory devices and as magnetic sensors. ORNL modeling capabilities were used to incorporate this information into a first-principles based tool that can be used to model the magnetic and transport properties of these films. This modeling capability should be useful for understanding and optimizing novel magnetoelectronic devices.

Physical Description

6 pages

Creation Information

Butler, W.H. February 14, 2001.

Context

This report is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this report can be viewed below.

Who

People and organizations associated with either the creation of this report or its content.

Author

Sponsor

Publisher

Provided By

UNT Libraries Government Documents Department

Serving as both a federal and a state depository library, the UNT Libraries Government Documents Department maintains millions of items in a variety of formats. The department is a member of the FDLP Content Partnerships Program and an Affiliated Archive of the National Archives.

Contact Us

What

Descriptive information to help identify this report. Follow the links below to find similar items on the Digital Library.

Description

ORNL's advanced characterization capabilities were used to determine the physical and chemical structure of magnetic multilayer films intended for application in non-volatile magnetic random access memory devices and as magnetic sensors. ORNL modeling capabilities were used to incorporate this information into a first-principles based tool that can be used to model the magnetic and transport properties of these films. This modeling capability should be useful for understanding and optimizing novel magnetoelectronic devices.

Physical Description

6 pages

Source

  • Other Information: PBD: 14 Feb 2001

Language

Item Type

Identifier

Unique identifying numbers for this report in the Digital Library or other systems.

  • Report No.: C/ORNL97-0477
  • Grant Number: AC05-96OR22464
  • DOI: 10.2172/777628 | External Link
  • Office of Scientific & Technical Information Report Number: 777628
  • Archival Resource Key: ark:/67531/metadc717001

Collections

This report is part of the following collection of related materials.

Office of Scientific & Technical Information Technical Reports

What responsibilities do I have when using this report?

When

Dates and time periods associated with this report.

Creation Date

  • February 14, 2001

Added to The UNT Digital Library

  • Sept. 29, 2015, 5:31 a.m.

Description Last Updated

  • March 11, 2016, 1:25 p.m.

Usage Statistics

When was this report last used?

Yesterday: 0
Past 30 days: 1
Total Uses: 3

Interact With This Report

Here are some suggestions for what to do next.

Start Reading

PDF Version Also Available for Download.

Citations, Rights, Re-Use

Butler, W.H. Atomic Scale Structure of Ultrathin Magnetic Multilayers and Correlation with Resistance and Giant Magnetoresistance and Spin-Dependent Tunneling, report, February 14, 2001; Tennessee. (digital.library.unt.edu/ark:/67531/metadc717001/: accessed August 23, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.