A Method to Improve Activation of Implanted Dopants in SiC

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Implantation of dopant ions in SiC has evolved according to the assumption that the best electrical results (i.e., carrier concentrations and mobility) is achieved by using the highest possible processing temperature. This includes implantation at > 600 C followed by furnace annealing at temperatures as high as 1,750 C. Despite such aggressive and extreme processing, implantation suffers because of poor dopant activation, typically ranging between < 2%--50% with p-type dopants represented in the lower portion of this range and n-types in the upper. Additionally, high-temperature processing can led to several problems including changes in the stoichiometry and topography of the ... continued below

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9 pages

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Holland, O.W. January 16, 2001.

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Implantation of dopant ions in SiC has evolved according to the assumption that the best electrical results (i.e., carrier concentrations and mobility) is achieved by using the highest possible processing temperature. This includes implantation at > 600 C followed by furnace annealing at temperatures as high as 1,750 C. Despite such aggressive and extreme processing, implantation suffers because of poor dopant activation, typically ranging between < 2%--50% with p-type dopants represented in the lower portion of this range and n-types in the upper. Additionally, high-temperature processing can led to several problems including changes in the stoichiometry and topography of the surface, as well as degradation of the electrical properties of devices. A novel approach for increasing activation of implanted dopants in SiC and lowering the activation temperature will be discussed. This approach utilizes the manipulation of the ion-induced damage to enhance activation of implanted dopants. It will be shown that nearly amorphous layers containing a small amount of residual crystallinity can be recrystallized at temperatures below 900 C with little residual damage. It will be shown that recrystallization traps a high fraction of the implanted dopant residing within the amorphous phase (prior to annealing) onto substitutional sites within the SiC lattice.

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9 pages

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  • Materials Research Society Fall 2000 Meeting, Boston, MA (US), 11/27/2000--12/01/2000

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  • Report No.: P01-109558
  • Grant Number: AC05-96OR22464
  • Office of Scientific & Technical Information Report Number: 774474
  • Archival Resource Key: ark:/67531/metadc716910

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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  • January 16, 2001

Added to The UNT Digital Library

  • Sept. 29, 2015, 5:31 a.m.

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  • March 29, 2016, 8:10 p.m.

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Holland, O.W. A Method to Improve Activation of Implanted Dopants in SiC, article, January 16, 2001; Tennessee. (digital.library.unt.edu/ark:/67531/metadc716910/: accessed November 22, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.