Optimization of the Ion-Cut Process in Si and SiC Page: 1 of 10
This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided to Digital Library by the UNT Libraries Government Documents Department.
The following text was automatically extracted from the image on this page using optical character recognition software:
Optimization of the Ion-Cut Process in Si and SiC
O. W. Holland,* D. K. Thomas,* and R. B. Gregory**
*Oak Ridge National Laboratory, Oak Ridge, TN 37831-6048
**Motorola Inc., Tempe, AZ 85284
H-implantation is the basis for an ion-cut process, which combines hydrophilic wafer
bonding, to produce heterostructures over a wide range of materials. This process has been
successfully applied in Si to produce a commercial silicon-on-insulator material. The efficacy of
implantation to produce thin-film separation was studied by investigation of Hf-induced
exfoliation in Si and SiC. Experiments were done to isolate the effects of the hydrogen
chemistry from that of implant damage. Damage is manipulated independently of H+ dosage by
a variety of techniques ranging from elevated temperature irradiation to a two-step implantation
scheme in Si, and the use of channeled-ion implantation in SiC. The results will demonstrate
that such schemes can significantly reduce the critical dose for exfoliation.
The ion-cut process utilizes both hydrogen implantation and wafer bonding  to form thin-
film heterostructures . Stress generated by hydrogen implantation can cause physical
separation within a solid at or near the range of the ions, Rp. Wafer bonding constrains this
separation to occur laterally so that the bonded pair completely separates resulting in transfer of
the superficial layer (i.e., the layer at the surface of the implanted wafer ahead of Rp). This
transfer process forms the heterostructure and can be repeated using different materials to yield
complex, multilayer structures. Ion-cut is presently used commercially to produce a silicon-on-
insulator (SOI) heterostructure . The utility of this process to produce thin-film hetero-
structures ultimately depends upon its economy and the quality of the transferred thin-films.
Therefore, it is important to develop optimization schemes that reduce the critical hydrogen dose
for affecting separation, and minimize the deleterious effects of ion-induced damage.
This paper reports the development of several schemes for optimization ion-cutting in Si and
SiC. The technological importance of these materials is well known, and the ability to use them
to form a heterostructure provides a tremendous tool for engineering materials. In particular, SiC
is a wide band-gap semiconductor that is targeted to replace Si in high-power, high-temperature
electronic applications. Ion-cutting may impact this development by making it possible to
manufacture hybrid integrated circuits fabricated on a composite substrate containing both
Irradiation was done with a raster-scanned beam of 60 keV H+-ions at an average current
density of -2 [amps/cm2. Random implants were nominally done with the sample normal tilted
70 relative to the incident ions, while no tilt was used for channeled-ion implantation. Samples
were mounted on a holder that was resistively heated to achieve the desired implantation
temperature. Si(100) wafers used in this study were n-type with a resistivity of -10 Q-cm, while
Here’s what’s next.
This article can be searched. Note: Results may vary based on the legibility of text within the document.
Tools / Downloads
Get a copy of this page or view the extracted text.
Citing and Sharing
Basic information for referencing this web page. We also provide extended guidance on usage rights, references, copying or embedding.
Reference the current page of this Article.
Holland, O.W. Optimization of the Ion-Cut Process in Si and SiC, article, January 5, 2001; Tennessee. (https://digital.library.unt.edu/ark:/67531/metadc716261/m1/1/: accessed March 26, 2019), University of North Texas Libraries, Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.