Next Generation Thin Films for Photovoltaics: InGaAsN; Preprint

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A new semiconductor alloy system, InGaAsN, has been identified as a candidate material for multi-junction solar cells having efficiencies greater than 40%. The introduction of small amounts of nitrogen ({approx}2%) into the InGaAs alloy system greatly reduces the band gap energy, with reductions approaching 0.4 eV for 2% nitrogen content! With the appropriate ratio of indium to nitrogen concentrations, InGaAsN can be lattice matched to GaAs.

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Jones, E. D.; Allerman, A. A.; Klem, J. F.; Kurtz, S.R.; Modine, N. R. (Sandia National Laboratories); Friedman, D. J. et al. April 1, 1999.

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A new semiconductor alloy system, InGaAsN, has been identified as a candidate material for multi-junction solar cells having efficiencies greater than 40%. The introduction of small amounts of nitrogen ({approx}2%) into the InGaAs alloy system greatly reduces the band gap energy, with reductions approaching 0.4 eV for 2% nitrogen content! With the appropriate ratio of indium to nitrogen concentrations, InGaAsN can be lattice matched to GaAs.

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  • Electrochemical Society International Symposium, Seattle, WA (US), 05/02/1999--05/06/1999

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  • Report No.: NREL/CP-520-29589
  • Grant Number: AC36-99GO10337
  • Office of Scientific & Technical Information Report Number: 789287
  • Archival Resource Key: ark:/67531/metadc715854

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • April 1, 1999

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  • Sept. 29, 2015, 5:31 a.m.

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  • March 31, 2016, 3:17 p.m.

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Jones, E. D.; Allerman, A. A.; Klem, J. F.; Kurtz, S.R.; Modine, N. R. (Sandia National Laboratories); Friedman, D. J. et al. Next Generation Thin Films for Photovoltaics: InGaAsN; Preprint, article, April 1, 1999; Golden, Colorado. (digital.library.unt.edu/ark:/67531/metadc715854/: accessed October 23, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.