Mechanisms of dislocation reduction in GaN using an intermediate temperature interlayer Page: 1 of 12
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Mechanisms of dislocation reduction in GaN using an intermediate temperature
E.D. Bourret-Courchesne, K.M. Yu, M. Benamara, Z. Liliental-Weber and J. Washburn
E.O. Lawrence Berkeley National Laboratory, 1 Cyclotron Road (M.S. 2-200), Berkeley
A dramatic reduction of the dislocation density in GaN was obtained by insertion
of a single thin interlayer grown at an intermediate temperature (IT-IL) after the initial
growth at high temperature. A description of the growth process is presented with
characterization results aimed at understanding the mechanisms of reduction in
dislocation density. A large percentage of the threading dislocations present in the first
GaN epilayer are found to bend near the interlayer and do not propagate into the top layer
which grows at higher temperature in a lateral growth mode. TEM studies show that the
mechanisms of dislocation reduction are identical to those described for the epitaxial
lateral overgrowth process, however a notable difference is the absence of coalescence
Keywords: GaN, OMVPE, dislocation, TEM, interlayer.
Corresponding author: Edith Bourret-Courchesne, Tel.: (510) 486-5553
Fax: (510) 486-5530, e-mail: EDBourret@lbl.gov
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Bourret-Courchesne, E.D.; Yu, K.M.; Benamara, M.; Liliental-Weber, Z. & Washburn, J. Mechanisms of dislocation reduction in GaN using an intermediate temperature interlayer, article, April 2, 2001; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc715407/m1/1/: accessed December 15, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.