Status of radiation damage measurements in room temperature semiconductor radiation detectors

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The literature of radiation damage measurements on cadmium zinc telluride (CZT), cadmium telluride (CT), and mercuric iodide (HgI{sub 2}) is reviewed for the purpose of determining their applicability to space applications. CZT strip detectors exposed to intermediate energy (1.3 MeV) proton fluences exhibit increased interstrip leakage after 10{sup 10} p/cm{sup 2} and significant bulk leakage after 10{sup 12} p/cm{sup 2}. CZT exposed to 200 MeV protons shows a two-fold loss in energy resolution after a fluence of 5 {times} 10{sup 9} p/cm{sup 2} in thick (3 mm) planar devices but little effect in 2 mm devices. No energy resolution effects ... continued below

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16 p.

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Franks, L.A. & James, R.B. April 1, 1998.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Livermore, CA (United States)
    Place of Publication: Livermore, California

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The literature of radiation damage measurements on cadmium zinc telluride (CZT), cadmium telluride (CT), and mercuric iodide (HgI{sub 2}) is reviewed for the purpose of determining their applicability to space applications. CZT strip detectors exposed to intermediate energy (1.3 MeV) proton fluences exhibit increased interstrip leakage after 10{sup 10} p/cm{sup 2} and significant bulk leakage after 10{sup 12} p/cm{sup 2}. CZT exposed to 200 MeV protons shows a two-fold loss in energy resolution after a fluence of 5 {times} 10{sup 9} p/cm{sup 2} in thick (3 mm) planar devices but little effect in 2 mm devices. No energy resolution effects were noted from moderated fission spectrum neutrons after fluences up to 10{sup 10} n/cm{sup 2}, although activation was evident. CT detectors show resolution losses after fluences of 3 {times} 10{sup 9} p/cm{sup 2} at 33 MeV for chlorine-doped detectors. Indium doped material may be more resistant. Neutron exposures (8 MeV) caused resolution losses after fluences of 2 {times} 10{sup 10} n/cm{sup 2}. Mercuric iodide has been studied with intermediate energy protons (10 to 33 MeV) at fluences up to 10{sup 12} p/cm{sup 2} and with 1.5 GeV protons at fluences up to 1.2 {times} 10{sup 8} p/cm{sup 2}. Neutron exposures at 8 MeV have been reported at fluences up to 10{sup 15} n/cm{sup 2}. No radiation damage was found under these irradiation conditions.

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16 p.

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INIS; OSTI as DE98053030

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  • Other Information: PBD: Apr 1998

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  • Other: DE98053030
  • Report No.: SAND--98-8237
  • Grant Number: AC04-94AL85000
  • DOI: 10.2172/656825 | External Link
  • Office of Scientific & Technical Information Report Number: 656825
  • Archival Resource Key: ark:/67531/metadc712564

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  • April 1, 1998

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  • Sept. 12, 2015, 6:31 a.m.

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  • April 12, 2016, 8:30 p.m.

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Franks, L.A. & James, R.B. Status of radiation damage measurements in room temperature semiconductor radiation detectors, report, April 1, 1998; Livermore, California. (digital.library.unt.edu/ark:/67531/metadc712564/: accessed December 10, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.