Defect structure of indium tin oxide and its relationship to conductivity

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Doping In{sub 2}O{sub 3} with tin results in an improved transparent conducting oxide (TCO). Although indium tin oxide (ITO) is the most frequently used commercial TCO, its defect structure is still uncertain. Previously, its defect chemistry has been inferred based on the conductivity of the material. To directly study the defect structure of ITO, the authors prepared powders under different processing environments and performed neutron powder diffraction. Structural information was obtained by performing Rietveld analysis. The results include positions of the atoms, their thermal displacements, the fractional occupancy of the defect oxygen site, and the fractional occupancies of Sn on ... continued below

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11 p.

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Gonzalez, G. B.; Cohen, J. B.; Hwang, J.-H.; Mason, T. O.; Hodges, J. P. & Jorgensen, J. D. May 9, 2000.

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Doping In{sub 2}O{sub 3} with tin results in an improved transparent conducting oxide (TCO). Although indium tin oxide (ITO) is the most frequently used commercial TCO, its defect structure is still uncertain. Previously, its defect chemistry has been inferred based on the conductivity of the material. To directly study the defect structure of ITO, the authors prepared powders under different processing environments and performed neutron powder diffraction. Structural information was obtained by performing Rietveld analysis. The results include positions of the atoms, their thermal displacements, the fractional occupancy of the defect oxygen site, and the fractional occupancies of Sn on each of the two nonequivalent cation sites, showing a strong preference for the b site. These structural results are correlated with the measured electrical properties of the same samples.

Physical Description

11 p.

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OSTI as DE00755865

Medium: P; Size: 11 pages

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  • International Conference on Mass and Charge Transport in Inorganic Materials, Techna Publ. SRL, Faenza (IT), 05/28/2000--06/02/2000

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  • Report No.: ANL/MSD/CP-101832
  • Grant Number: W-31109-ENG-38
  • Office of Scientific & Technical Information Report Number: 755865
  • Archival Resource Key: ark:/67531/metadc712505

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  • May 9, 2000

Added to The UNT Digital Library

  • Sept. 12, 2015, 6:31 a.m.

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  • April 6, 2017, 7:26 p.m.

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Gonzalez, G. B.; Cohen, J. B.; Hwang, J.-H.; Mason, T. O.; Hodges, J. P. & Jorgensen, J. D. Defect structure of indium tin oxide and its relationship to conductivity, article, May 9, 2000; Illinois. (digital.library.unt.edu/ark:/67531/metadc712505/: accessed June 23, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.