Improved performance of self-aligned, selective-emitter silicon solar cells

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The authors improved a self-aligned emitter etchback technique that requires only a single emitter diffusion and no alignments to form self-aligned, patterned-emitter profiles. Standard commercial screen-printed gridlines mask a plasma-etchback of the emitter. A subsequent PECVD-nitride deposition provides good surface and bulk passivation and an antireflection coating. They used full-size multicrystalline silicon (mc-Si) cells processed in a commercial production line and performed a statistically designed multiparameter experiment to optimize the use of a hydrogenation treatment to increase performance. They obtained an improvement of almost a full percentage point in cell efficiency when the self-aligned emitter etchback was combined with an ... continued below

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4 p.

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Ruby, D. S.; Yang, P.; Zaidi, S.; Brueck, S.; Roy, M. & Narayanan, S. December 31, 1997.

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This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 11 times . More information about this article can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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The authors improved a self-aligned emitter etchback technique that requires only a single emitter diffusion and no alignments to form self-aligned, patterned-emitter profiles. Standard commercial screen-printed gridlines mask a plasma-etchback of the emitter. A subsequent PECVD-nitride deposition provides good surface and bulk passivation and an antireflection coating. They used full-size multicrystalline silicon (mc-Si) cells processed in a commercial production line and performed a statistically designed multiparameter experiment to optimize the use of a hydrogenation treatment to increase performance. They obtained an improvement of almost a full percentage point in cell efficiency when the self-aligned emitter etchback was combined with an optimized 3-step PECVD-nitride surface passivation and hydrogenation treatment. The authors also investigated the inclusion of a plasma-etching process that results in a low-reflectance, textured surface on multicrystalline silicon cells. Preliminary results indicate reflectance can be significantly reduced without etching away the emitter diffusion.

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4 p.

Notes

OSTI as DE98006171

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  • 8. workshop on crystalline silicon solar cell materials and processes, Copper Mountain, CO (United States), 17-19 Aug 1998

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  • Other: DE98006171
  • Report No.: SAND--97-3005C
  • Report No.: CONF-980828--
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 656873
  • Archival Resource Key: ark:/67531/metadc712411

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  • December 31, 1997

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  • Sept. 12, 2015, 6:31 a.m.

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  • May 5, 2016, 8:43 p.m.

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Ruby, D. S.; Yang, P.; Zaidi, S.; Brueck, S.; Roy, M. & Narayanan, S. Improved performance of self-aligned, selective-emitter silicon solar cells, article, December 31, 1997; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc712411/: accessed September 21, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.