Structure, composition, and strain profiling of Si/SiO{sub 2} interfaces

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Description

Recently, the scanning transmission electron microscope has become capable of forming electron probes of atomic dimensions. This makes possible the technique of Z-contrast imaging, a method of forming incoherent images at atomic resolution having high compositional sensitivity. An incoherent image of this nature also allows the positions of atomic columns in a crystal to be directly determined, without the need for model structures and image simulations. Furthermore, atomic resolution chemical analysis can be performed by locating the probe over particular columns or planes seen in the image while electron energy loss spectra are collected. The authors present images of the ... continued below

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8 p.

Creation Information

Duscher, G.; Pennycook, S.J.; Gao, H.J.; Browning, N.D. & Singh, R. March 1, 1998.

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  • Duscher, G. Univ. of Illinois, Chicago, IL (United States). Dept. of Physics
  • Pennycook, S.J. Oak Ridge National Lab., TN (United States). Solid State Div.
  • Gao, H.J. Univ. of Florida, Gainesville, FL (United States). Dept. of Materials Science and Engineering
  • Browning, N.D. Univ. of Illinois, Chicago, IL (United States). Dept. of Physics
  • Singh, R. Univ. of Florida, Gainesville, FL (United States). Dept. of Materials Science and Engineering

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Description

Recently, the scanning transmission electron microscope has become capable of forming electron probes of atomic dimensions. This makes possible the technique of Z-contrast imaging, a method of forming incoherent images at atomic resolution having high compositional sensitivity. An incoherent image of this nature also allows the positions of atomic columns in a crystal to be directly determined, without the need for model structures and image simulations. Furthermore, atomic resolution chemical analysis can be performed by locating the probe over particular columns or planes seen in the image while electron energy loss spectra are collected. The authors present images of the Si/SiO{sub 2} interface showing no crystalline oxide, compositional profiles across a nitrided sample at 2.5 {angstrom} resolution showing an extended sub-stoichiometric zone, and strain profiles at a rough interface showing static rms displacements {approximately}0.1 {angstrom} extending 10 {angstrom} into the crystalline Si.

Physical Description

8 p.

Notes

OSTI as DE98004883

Source

  • 1998 international conference on characterization and metrology for ULSI technology, Gaithersburg, MD (United States), 23-27 Mar 1998

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  • Other: DE98004883
  • Report No.: ORNL/CP--97259
  • Report No.: CONF-980364--
  • Grant Number: AC05-96OR22464
  • DOI: 10.2172/672106 | External Link
  • Office of Scientific & Technical Information Report Number: 672106
  • Archival Resource Key: ark:/67531/metadc712244

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Creation Date

  • March 1, 1998

Added to The UNT Digital Library

  • Sept. 12, 2015, 6:31 a.m.

Description Last Updated

  • Jan. 21, 2016, 12:38 p.m.

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Duscher, G.; Pennycook, S.J.; Gao, H.J.; Browning, N.D. & Singh, R. Structure, composition, and strain profiling of Si/SiO{sub 2} interfaces, report, March 1, 1998; Tennessee. (digital.library.unt.edu/ark:/67531/metadc712244/: accessed October 20, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.