Medium-range order in hydrogenated amorphous silicon measured by fluctuation microscopy Metadata

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Title

  • Main Title Medium-range order in hydrogenated amorphous silicon measured by fluctuation microscopy

Creator

  • Author: Voyles, P. M.
    Creator Type: Personal
  • Author: Treacy, M. M. J.
    Creator Type: Personal
  • Author: Jin, H.-C.
    Creator Type: Personal
  • Author: Abelson, J. R.
    Creator Type: Personal
  • Author: Gibson, J. M.
    Creator Type: Personal
  • Author: Guha, S.
    Creator Type: Personal
  • Author: Crandall, R. S.
    Creator Type: Personal

Contributor

  • Sponsor: United States. Department of Energy.
    Contributor Type: Organization
    Contributor Info: US Department of Energy (United States)

Publisher

  • Name: Argonne National Laboratory
    Place of Publication: Illinois
    Additional Info: Argonne National Lab., IL (United States)

Date

  • Creation: 2000-04-17

Language

  • English

Description

  • Content Description: The authors have characterized with fluctuation electron microscopy the medium-range order of hydrogenated amorphous silicon thin films deposited by a variety of methods. Films were deposited by reactive magnetron sputtering, hot-wire chemical vapor deposition, and plasma enhanced chemical vapor deposition with and without H{sub 2} dilution of the SiH{sub 4} precursor gas. All of the films show the signature of the paracrystalline structure typical of amorphous Si. There are small variations in the degree of medium-range order with deposition methods and H{sub 2} content. The PECVD film grown with high H{sub 2} dilution contains Si crystals {approximately} 5 nm in diameter at a density of {approximately} 10{sup 9} cm{sup 2}. The amorphous matrix surrounding these crystals shows no difference in medium-range order from the standard PECVD film.
  • Physical Description: 9 p.

Subject

  • Keyword: Vapor Deposited Coatings
  • STI Subject Categories: 36 Materials Science
  • Keyword: Chemical Vapor Deposition
  • Keyword: Amorphous State
  • Keyword: Order Parameters
  • Keyword: Sputtering
  • Keyword: Silicon

Source

  • Conference: 2000 MRS Spring Meeting, San Francisco, CA (US), 04/24/2000--04/28/2000

Collection

  • Name: Office of Scientific & Technical Information Technical Reports
    Code: OSTI

Institution

  • Name: UNT Libraries Government Documents Department
    Code: UNTGD

Resource Type

  • Article

Format

  • Text

Identifier

  • Report No.: ANL/MSD/CP-101088
  • Grant Number: W-31109-ENG-38
  • Office of Scientific & Technical Information Report Number: 754474
  • Archival Resource Key: ark:/67531/metadc712232

Note

  • Display Note: OSTI as DE00754474
  • Display Note: Medium: P; Size: 9 pages
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