Time-of-flight SIMS/MSRI reflectron mass analyzer and method

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Description

A method and apparatus for analyzing the surface characteristics of a sample by Secondary Ion Mass Spectroscopy (SIMS) and Mass Spectroscopy of Recoiled Ions (MSFU) is provided. The method includes detecting back scattered primary ions, low energy ejected species, and high energy ejected species by ion beam surface analysis techniques comprising positioning a ToF SIMS/MSRI mass analyzer at a predetermined angle {theta}, where {theta} is the angle between the horizontal axis of the mass analyzer and the unreflected primary ion beam line, and applying a specific voltage to the back ring of the analyzer. Preferably, {theta} is less than or ... continued below

Physical Description

38 p.

Creation Information

Smentkowski, Vincent S.; Gruen, Dieter M.; Krauss, Alan R.; Schultz, Albert J. & Holecek, John C. December 1, 1997.

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Description

A method and apparatus for analyzing the surface characteristics of a sample by Secondary Ion Mass Spectroscopy (SIMS) and Mass Spectroscopy of Recoiled Ions (MSFU) is provided. The method includes detecting back scattered primary ions, low energy ejected species, and high energy ejected species by ion beam surface analysis techniques comprising positioning a ToF SIMS/MSRI mass analyzer at a predetermined angle {theta}, where {theta} is the angle between the horizontal axis of the mass analyzer and the unreflected primary ion beam line, and applying a specific voltage to the back ring of the analyzer. Preferably, {theta} is less than or equal to about 120{degree} and, more preferably, equal to 74{degree}. For positive ion analysis, the extractor, lens, and tint ring of the reflection are set at negative high voltages ({minus}Hv). The back ring of the reflection is set at greater than about +700V for MSRI measurements and between the range of about +15V and about +50V for SIMS measurements. The method further comprises inverting the polarity of the potentials applied to the extractor, lens, front ring, and back ring to obtain negative ion SIMS and/or MSRI data.

Physical Description

38 p.

Notes

OSTI as DE00757260

Medium: P; Size: 38 pages

Source

  • Patent File Date: 1997 Oct 15

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  • Report No.: PATENTS-US--A8953792
  • Grant Number: W-31109-ENG-38
  • Office of Scientific & Technical Information Report Number: 757260
  • Archival Resource Key: ark:/67531/metadc712112

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • December 1, 1997

Added to The UNT Digital Library

  • Sept. 12, 2015, 6:31 a.m.

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  • April 12, 2017, 2:36 p.m.

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Smentkowski, Vincent S.; Gruen, Dieter M.; Krauss, Alan R.; Schultz, Albert J. & Holecek, John C. Time-of-flight SIMS/MSRI reflectron mass analyzer and method, patent, December 1, 1997; Illinois. (digital.library.unt.edu/ark:/67531/metadc712112/: accessed December 15, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.