High-performance, lattice-mismatched InGaAs/InP monolithic interconnected modules (MIMs)

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High performance, lattice-mismatched p/n InGaAs/lnP monolithic interconnected module (MIM) structures were developed for thermophotovoltaic (TPV) applications. A MIM device consists of several individual InGaAs photovoltaic (PV) cells series-connected on a single semi-insulating (S.I.) InP substrate. Both interdigitated and conventional (i.e., non-interdigitated) MIMs were fabricated. The energy bandgap (Eg) for these devices was 0.60 eV. A compositionally step-graded InPAs buffer was used to accommodate a lattice mismatch of 1.1% between the active InGaAs cell structure and the InP substrate. 1x1-cm, 15-cell, 0.60-eV MIMs demonstrated an open-circuit voltage (Voc) of 5.2 V (347 mV per cell) and a fill factor of 68.6% ... continued below

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11 p.

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Fatemi, Navid S.; Wilt, David M.; Hoffman, Richard W., Jr.; Stan, Mark S.; Weizer, Victor G.; Jenkins, Phillip P. et al. October 1, 1998.

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  • Bettis Atomic Power Laboratory
    Publisher Info: Bettis Atomic Power Lab., West Mifflin, PA (United States)
    Place of Publication: West Mifflin, Pennsylvania

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High performance, lattice-mismatched p/n InGaAs/lnP monolithic interconnected module (MIM) structures were developed for thermophotovoltaic (TPV) applications. A MIM device consists of several individual InGaAs photovoltaic (PV) cells series-connected on a single semi-insulating (S.I.) InP substrate. Both interdigitated and conventional (i.e., non-interdigitated) MIMs were fabricated. The energy bandgap (Eg) for these devices was 0.60 eV. A compositionally step-graded InPAs buffer was used to accommodate a lattice mismatch of 1.1% between the active InGaAs cell structure and the InP substrate. 1x1-cm, 15-cell, 0.60-eV MIMs demonstrated an open-circuit voltage (Voc) of 5.2 V (347 mV per cell) and a fill factor of 68.6% at a short-circuit current density (Jsc) of 2.0 A/cm{sup 2}, under flashlamp testing. The reverse saturation current density (Jo) was 1.6x10{sup {minus}6} A/cm{sup 2}. Jo values as low as 4.1x10{sup {minus}7} A/cm{sup 2} were also observed with a conventional planar cell geometry.

Physical Description

11 p.

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OSTI as DE00756778

Medium: P; Size: 11 pages

Source

  • 4th NREL Conference on Thermophotovoltaic Generation of Electricity, Denver, CO (US), 10/11/1998--10/15/1998

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  • Report No.: B-T-3208
  • Report No.: WAPD-T-3208
  • Grant Number: AC11-93PN38195
  • Office of Scientific & Technical Information Report Number: 756778
  • Archival Resource Key: ark:/67531/metadc711881

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  • October 1, 1998

Added to The UNT Digital Library

  • Sept. 12, 2015, 6:31 a.m.

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  • April 6, 2017, 7:37 p.m.

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Fatemi, Navid S.; Wilt, David M.; Hoffman, Richard W., Jr.; Stan, Mark S.; Weizer, Victor G.; Jenkins, Phillip P. et al. High-performance, lattice-mismatched InGaAs/InP monolithic interconnected modules (MIMs), article, October 1, 1998; West Mifflin, Pennsylvania. (digital.library.unt.edu/ark:/67531/metadc711881/: accessed October 16, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.