Ultra-high implant activation efficiency in GaN using novel high temperature RTP system

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Si{sup +} implant activation efficiencies above 90%, even at doses of 5 {times} 10{sup 15} cm{sup {minus}2}, have been achieved in GaN by RTP at 1,400--1,500 C for 10 secs. The annealing system utilizes with MoSi{sub 2} heating elements capable of operation up to 1,900 C, producing high heating and cooling rates (up to 100 C{center_dot}s{sup {minus}1}). Unencapsulated GaN show severe surface pitting at 1,300 C, and complete loss of the film by evaporation at 1,400 C. Dissociation of nitrogen from the surface is found to occur with an approximate activation energy of 3.8 eV for GaN (compared to 4.4 ... continued below

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8 p.

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Cao, X.A.; Abernathy, C.R. & Singh, R.K. April 1, 1998.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

Si{sup +} implant activation efficiencies above 90%, even at doses of 5 {times} 10{sup 15} cm{sup {minus}2}, have been achieved in GaN by RTP at 1,400--1,500 C for 10 secs. The annealing system utilizes with MoSi{sub 2} heating elements capable of operation up to 1,900 C, producing high heating and cooling rates (up to 100 C{center_dot}s{sup {minus}1}). Unencapsulated GaN show severe surface pitting at 1,300 C, and complete loss of the film by evaporation at 1,400 C. Dissociation of nitrogen from the surface is found to occur with an approximate activation energy of 3.8 eV for GaN (compared to 4.4 eV for AlN and 3.4 eV for InN). Encapsulation with either rf-magnetron reactively sputtered or MOMBE-grown AlN thin films provide protection against GaN surface degradation up to 1,400 C, where peak electron concentrations of {approximately} 5 {times} 10{sup 20} cm{sup {minus}3} can be achieved in Si-implanted GaN. SIMS profiling showed little measurable redistribution of Si, suggesting D{sub Si} {le} 10{sup {minus}13} cm{sup 2}{center_dot}s{sup {minus}1} at 1,400 C . The implant activation efficiency decreases at higher temperatures, which may result from Si{sub Ga} to Si{sub N} site switching and resultant self-compensation.

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8 p.

Notes

OSTI as DE98004759

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  • Spring meeting of the Materials Research Society, San Francisco, CA (United States), 13-17 Apr 1998

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  • Other: DE98004759
  • Report No.: SAND--98-0950C
  • Report No.: CONF-980405--
  • Grant Number: AC04-94AL85000
  • DOI: 10.2172/672011 | External Link
  • Office of Scientific & Technical Information Report Number: 672011
  • Archival Resource Key: ark:/67531/metadc711855

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  • April 1, 1998

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  • Sept. 12, 2015, 6:31 a.m.

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  • May 5, 2016, 8:55 p.m.

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Cao, X.A.; Abernathy, C.R. & Singh, R.K. Ultra-high implant activation efficiency in GaN using novel high temperature RTP system, report, April 1, 1998; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc711855/: accessed August 23, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.