Exploring New Active Regions for Type 1 InasSb Strained-Layer Lasers Page: 2 of 12
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injection lasers using not intentionally doped, p-type AlAs0.16Sb0.84 for optical
confinement and both strained InAsSb/InAs multiple quantum well (MQW) and
InAsSb/InAsP strained-layer superlattice (SLS) active regions [1,2]. We have also
reported the first ten-stage cascaded lasers and LED's with type I InAsSb/InAsP
quantum-well active regions grown by MOCVD[3]. These cascaded lasers employ a (p)
GaAsSb/ (n) InAs semimetal electron/hole source between stages. In compressively
strained InAsSb SLSs, it is necessary to maximize the light-heavy (13/2, 1/2> -
1312, 3/2>) hole splitting to suppress non-radiative Auger recombination. Recently,
Bewlwy et al. have reported record high output powers and operating temperatures for
mid-infrared InAs/GaInSb/AIAsSb type II optically pumped lasers using a diamond-
pressure-bond heat sinking technique [4]. We are currently exploring the growth of new
emitter structures as well as the use of novel materials in these structures to improve our
laser performance. In an attempt to further reduce the Auger recombination by increasing
the hole confinement we have used InPSb as the barrier layer in the active region. We
report on the synthesis and properties of these InAsSb/InPSb SLSs grown by MOCVD
and their use in 3-4 pm, mid-infrared optoelectronic heterojunction emitters,
Experimental
The InAsSb/InPSb SLSs were grown by MOCVD on n-type InAs substrates. The
SLSs were grown at 500 "C, and 70 torr in an Emcore D75 high speed rotating disk
reactor using trimethylindium (TMIn), triethylantimony (TESb), 100% or 10 % AsH3 in
hydrogen, 100 % PH3, and hydrogen as the carrier gas. The SLS composition and strain
were determined by double crystal x-ray diffraction.
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Biefeld, R. M.; Kurtz, S. R. & Phillips, J. D. Exploring New Active Regions for Type 1 InasSb Strained-Layer Lasers, article, May 13, 1999; Albuquerque, New Mexico. (https://digital.library.unt.edu/ark:/67531/metadc711810/m1/2/: accessed April 18, 2024), University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.