Exploring New Active Regions for Type 1 InasSb Strained-Layer Lasers

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We report on the metal-organic chemical vapor deposition (MOCVD) of mid- infrared InAsSb/InPSb optically pumped lasers grown using a high speed rotating disk reactor (RDR). The devices contain AlAsSb claddings and strained, type 1, InAsSb/InPSb active regions. By changing the layer thickness and composition of InAsSb/InPSb SLSs, we have prepared structures with low temperature (<20K) photoluminescence wavelengths ranging from 3.4 to 4.8 &micro;m. We find a variation of bandgap from 0.272 to 0.324 eV for layer thicknesses of 9.0 to 18.2 nm. From these data we have estimated a valence band offset for the InAsSb/InPSb interface of about 400 meV. ... continued below

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11 Pages

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Biefeld, R. M.; Kurtz, S. R. & Phillips, J. D. May 13, 1999.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA
    Place of Publication: Albuquerque, New Mexico

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Description

We report on the metal-organic chemical vapor deposition (MOCVD) of mid- infrared InAsSb/InPSb optically pumped lasers grown using a high speed rotating disk reactor (RDR). The devices contain AlAsSb claddings and strained, type 1, InAsSb/InPSb active regions. By changing the layer thickness and composition of InAsSb/InPSb SLSs, we have prepared structures with low temperature (<20K) photoluminescence wavelengths ranging from 3.4 to 4.8 &micro;m. We find a variation of bandgap from 0.272 to 0.324 eV for layer thicknesses of 9.0 to 18.2 nm. From these data we have estimated a valence band offset for the InAsSb/InPSb interface of about 400 meV. An InAsSb/InPSb SLS, optically pumped laser structure was grown on an InAs substrate with AlAs<sub>0.l6</sub>Sb<sub>0.84</sub> claddings. A lasing threshold and spectrally narrowed laser emission was seen from 80 K through 200 K, the maximum temperature where Iasing occurred. The temperature dependence of the SLS laser threshold is described by a characteristic temperature, T<sub>0</sub> = 72 K, from 80 to 200 K.

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11 Pages

Source

  • 9th Biennial Workshop on Organometallic Vapor Phase Epitaxy; Ponte Vedra Beach, FL; 05/23-27/1999

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  • Other: DE00007142
  • Report No.: SAND99-0415C
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 7142
  • Archival Resource Key: ark:/67531/metadc711810

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  • May 13, 1999

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  • Sept. 12, 2015, 6:31 a.m.

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  • Nov. 28, 2016, 2:33 p.m.

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Biefeld, R. M.; Kurtz, S. R. & Phillips, J. D. Exploring New Active Regions for Type 1 InasSb Strained-Layer Lasers, article, May 13, 1999; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc711810/: accessed September 21, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.