Advanced lithography for nanofabrication

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A novel method for generating lateral features by patterning the naturally forming surface hydride layer on Si is described. Because of the relatively strong chemical bonding between silicon and hydrogen, the hydride layer acts as a robust passivation layer with essentially zero surface mobility at ordinary temperatures. A focused electron beam from a scanning electron microscope was used for patterning. Upon losing the hydrogen passivation the silicon surface sites become highly reactive. Ideally, the lifetime of such a pattern in a clean environment should be infinite. Deliberate exposure of the entire wafer to a suitable gas phase precursor results in ... continued below

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8 p.

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Hui, F. & Eres, G. June 1, 1997.

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Description

A novel method for generating lateral features by patterning the naturally forming surface hydride layer on Si is described. Because of the relatively strong chemical bonding between silicon and hydrogen, the hydride layer acts as a robust passivation layer with essentially zero surface mobility at ordinary temperatures. A focused electron beam from a scanning electron microscope was used for patterning. Upon losing the hydrogen passivation the silicon surface sites become highly reactive. Ideally, the lifetime of such a pattern in a clean environment should be infinite. Deliberate exposure of the entire wafer to a suitable gas phase precursor results in selective area film growth on the depassivated pattern. Linewidths and feature sizes of silicon dioxide on silicon below 100nm were achieved upon exposure to air. The silicon dioxide is robust and allows effective pattern transfer by anisotropic wet-chemical etching. In this paper, the mechanism of hydrogen desorption and subsequent pattern formation, and the factors that govern the ultimate pattern resolution will be discussed.

Physical Description

8 p.

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OSTI as DE98005585

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  • 1996 Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 2-6 Dec 1996

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  • Other: DE98005585
  • Report No.: ORNL/CP--92773
  • Report No.: CONF-961202--
  • Grant Number: AC05-96OR22464
  • Office of Scientific & Technical Information Report Number: 672050
  • Archival Resource Key: ark:/67531/metadc711460

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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  • June 1, 1997

Added to The UNT Digital Library

  • Sept. 12, 2015, 6:31 a.m.

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  • Nov. 3, 2016, 7:01 p.m.

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Hui, F. & Eres, G. Advanced lithography for nanofabrication, article, June 1, 1997; Tennessee. (digital.library.unt.edu/ark:/67531/metadc711460/: accessed September 25, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.