Atomic hydrogen cleaning of GaAS Photocathodes

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It is well known that surface contaminants on semiconductors can be removed when samples are exposed to atomic hydrogen. Atomic H reacts with oxides and carbides on the surface, forming compounds that are liberated and subsequently pumped away. Experiments at Jefferson lab with bulk GaAs in a low-voltage ultra-high vacuum H cleaning chamber have resulted in the production of photocathodes with high photoelectron yield (i.e., quantum efficiency) and long lifetime. A small, portable H cleaning apparatus also has been constructed to successfully clean GaAs samples that are later removed from the vacuum apparatus, transported through air and installed in a ... continued below

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Poelker, M.; Price, J. & Sinclair, C. January 1, 1997.

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It is well known that surface contaminants on semiconductors can be removed when samples are exposed to atomic hydrogen. Atomic H reacts with oxides and carbides on the surface, forming compounds that are liberated and subsequently pumped away. Experiments at Jefferson lab with bulk GaAs in a low-voltage ultra-high vacuum H cleaning chamber have resulted in the production of photocathodes with high photoelectron yield (i.e., quantum efficiency) and long lifetime. A small, portable H cleaning apparatus also has been constructed to successfully clean GaAs samples that are later removed from the vacuum apparatus, transported through air and installed in a high-voltage laser-driven spin-polarized electron source. These results indicate that this method is a versatile and robust alternative to conventional wet chemical etching procedures usually employed to clean bulk GaAs.

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80 Kilobytes pages

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  • Report No.: DOE/ER/40150-1476
  • Report No.: JLAB-ACC-97-03
  • Grant Number: AC05-84ER40150
  • Office of Scientific & Technical Information Report Number: 755829
  • Archival Resource Key: ark:/67531/metadc711361

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  • January 1, 1997

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  • Sept. 12, 2015, 6:31 a.m.

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  • Feb. 5, 2016, 7:50 p.m.

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Poelker, M.; Price, J. & Sinclair, C. Atomic hydrogen cleaning of GaAS Photocathodes, article, January 1, 1997; Newport News, Virginia. (digital.library.unt.edu/ark:/67531/metadc711361/: accessed October 23, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.