Investigations of chemical vapor deposition of GaN using synchrotron radiation

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The authors apply synchrotron x-ray analysis techniques to probe the surface structure of GaN films during synthesis by metal-organic chemical vapor deposition (MOCVD). Their approach is to observe the evolution of surface structure and morphology in real time using grazing incidence x-ray scattering (GIXS). This technique combines the ability of x-rays to penetrate the chemical vapor deposition environment for in situ measurements, with the sensitivity of GIXS to atomic scale structure. In this paper they present examples from some of their studies of growth modes and surface evolution as a function of process conditions that illustrate the capabilities of synchrotron ... continued below

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14 p.

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Thompson, C.; Stephenson, G. B.; Eastman, J. A.; Munkholm, A.; Auciello, O.; Murty, M. V. R. et al. May 25, 2000.

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The authors apply synchrotron x-ray analysis techniques to probe the surface structure of GaN films during synthesis by metal-organic chemical vapor deposition (MOCVD). Their approach is to observe the evolution of surface structure and morphology in real time using grazing incidence x-ray scattering (GIXS). This technique combines the ability of x-rays to penetrate the chemical vapor deposition environment for in situ measurements, with the sensitivity of GIXS to atomic scale structure. In this paper they present examples from some of their studies of growth modes and surface evolution as a function of process conditions that illustrate the capabilities of synchrotron x-ray analysis during MOCVD growth. They focus on studies of the homoepitaxial growth mode, island coarsening dynamics, and effects of impurities.

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14 p.

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OSTI as DE00755890

Medium: P; Size: 14 pages

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  • 197th Meeting of the Electrochemical Society, Toronto, Ontario (CA), 05/14/2000--05/19/2000

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  • Report No.: ANL/MSD/CP-101980
  • Grant Number: W-31109-ENG-38
  • Office of Scientific & Technical Information Report Number: 755890
  • Archival Resource Key: ark:/67531/metadc711193

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  • May 25, 2000

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  • Sept. 12, 2015, 6:31 a.m.

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  • April 7, 2017, 2:31 p.m.

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Thompson, C.; Stephenson, G. B.; Eastman, J. A.; Munkholm, A.; Auciello, O.; Murty, M. V. R. et al. Investigations of chemical vapor deposition of GaN using synchrotron radiation, article, May 25, 2000; Illinois. (digital.library.unt.edu/ark:/67531/metadc711193/: accessed December 16, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.