Low damage, highly anisotropic dry etching of SiC

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A parametric study of the etching characteristics of 6H p{sup +} and n{sup +} SiC and thin film SiC{sub 0.5}N{sub 0.5} in Inductively Coupled Plasma NF{sub 3}/O{sub 2} and NF{sub 3}/Ar discharges has been performed. The etch rates in both chemistries increase monotonically with NF{sub 3} percentage and rf chuck power. The etch rates go through a maximum with increasing ICP source power, which is explained by a trade-off between the increasing ion flux and the decreasing ion energy. The anisotropy of the etched features is also a function of ion flux, ion energy and atomic fluorine neutral concentration. Indium-tin-oxide ... continued below

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7 p.

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Wang, J.J.; Hong, J.; Lambers, E.S.; Pearton, S.J.; Ren, F.; Ostling, M. et al. March 1, 1998.

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This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 19 times . More information about this article can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

A parametric study of the etching characteristics of 6H p{sup +} and n{sup +} SiC and thin film SiC{sub 0.5}N{sub 0.5} in Inductively Coupled Plasma NF{sub 3}/O{sub 2} and NF{sub 3}/Ar discharges has been performed. The etch rates in both chemistries increase monotonically with NF{sub 3} percentage and rf chuck power. The etch rates go through a maximum with increasing ICP source power, which is explained by a trade-off between the increasing ion flux and the decreasing ion energy. The anisotropy of the etched features is also a function of ion flux, ion energy and atomic fluorine neutral concentration. Indium-tin-oxide (ITO) masks display relatively good etch selectivity over SiC (maximum of {approximately} 70:1), while photoresist etches more rapidly than SiC. The surface roughness of SiC is essentially independent of plasma composition for NF3/O2 discharges, while extensive surface degradation occurs for SiCN under high NF{sub 3}:O{sub 2} conditions.

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7 p.

Notes

OSTI as DE98004235

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  • 4. international high temperature electronics conference, Albuquerque, NM (United States), 14-19 Jun 1998

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  • Other: DE98004235
  • Report No.: SAND--98-0662C
  • Report No.: CONF-980622--
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 650321
  • Archival Resource Key: ark:/67531/metadc711187

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  • March 1, 1998

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  • Sept. 12, 2015, 6:31 a.m.

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  • May 5, 2016, 8:53 p.m.

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Wang, J.J.; Hong, J.; Lambers, E.S.; Pearton, S.J.; Ren, F.; Ostling, M. et al. Low damage, highly anisotropic dry etching of SiC, article, March 1, 1998; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc711187/: accessed August 20, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.