Fiber-optic polymer residue monitor Page: 1 of 16
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Fiber-optic polymer residue monitor CLWkF-&/ / / 9 -
Kent B. Pfeifera, Robert L. Jarecki, Jr.a, Timothy J. Daltonb
aSandia National Laboratories, P.O. Box 5800, Albuquerque, NM 87185-1425
bDigital Semiconductor, 75 Reed Rd., Hudson, MA 01749
Semiconductor processing tools that use a plasma to etch polysilicon or oxides produce
residue polymers that build up on the exposed surfaces of the processing chamber.
-- - ------ d2 SEP 1 6 198
n1 n2 n3
Figure 1. Diagram of probe tip showing optical fiber, and residue polymer film.
The index of refraction of the fiber core is n1, the index of the residue polymer is
n2, and the index of the plasma chamber is n3. The physical thickness of the film is
These residues are generally stressed and with time can cause flaking onto wafers
resulting in yield loss. Currently, residue buildup is not monitored, and chambers are
cleaned at regular intervals resulting in excess downtime for the tool. In addition,
knowledge of the residue buildup rate and index of refraction is useful in determining
the state of health of the chamber process. We have developed a novel optical
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Pfeifer, K.B.; Jarecki, R.L. Jr. & Dalton, T.J. Fiber-optic polymer residue monitor, article, October 1, 1998; Albuquerque, New Mexico. (https://digital.library.unt.edu/ark:/67531/metadc711047/m1/1/: accessed April 21, 2019), University of North Texas Libraries, Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.