LDRD Final Report - Investigations of the impact of the process integration of deposited magnetic films for magnetic memory technologies on radiation-hardened CMOS devices and circuits - LDRD Project (FY99)

One of 90 reports in the series: Fiscal Year 1999 available on this site.

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Description

This project represented a coordinated LLNL-SNL collaboration to investigate the feasibility of developing radiation-hardened magnetic non-volatile memories using giant magnetoresistance (GMR) materials. The intent of this limited-duration study was to investigate whether giant magnetoresistance (GMR) materials similar to those used for magnetic tunnel junctions (MTJs) were process compatible with functioning CMOS circuits. Sandia's work on this project demonstrated that deposition of GMR materials did not affect the operation nor the radiation hardness of Sandia's rad-hard CMOS technology, nor did the integration of GMR materials and exposure to ionizing radiation affect the magnetic properties of the GMR films. Thus, following deposition ... continued below

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25 p.

Creation Information

MYERS,DAVID R.; JESSING,JEFFREY R.; SPAHN,OLGA B. & SHANEYFELT,MARTY R. January 1, 2000.

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This report is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 12 times . More information about this report can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)
    Place of Publication: Albuquerque, New Mexico

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  • Main Title: LDRD Final Report - Investigations of the impact of the process integration of deposited magnetic films for magnetic memory technologies on radiation-hardened CMOS devices and circuits - LDRD Project (FY99)
  • Series Title: Fiscal Year 1999

Description

This project represented a coordinated LLNL-SNL collaboration to investigate the feasibility of developing radiation-hardened magnetic non-volatile memories using giant magnetoresistance (GMR) materials. The intent of this limited-duration study was to investigate whether giant magnetoresistance (GMR) materials similar to those used for magnetic tunnel junctions (MTJs) were process compatible with functioning CMOS circuits. Sandia's work on this project demonstrated that deposition of GMR materials did not affect the operation nor the radiation hardness of Sandia's rad-hard CMOS technology, nor did the integration of GMR materials and exposure to ionizing radiation affect the magnetic properties of the GMR films. Thus, following deposition of GMR films on rad-hard integrated circuits, both the circuits and the films survived ionizing radiation levels consistent with DOE mission requirements. Furthermore, Sandia developed techniques to pattern deposited GMR films without degrading the completed integrated circuits upon which they were deposited. The present feasibility study demonstrated all the necessary processing elements to allow fabrication of the non-volatile memory elements onto an existing CMOS chip, and even allow the use of embedded (on-chip) non-volatile memories for system-on-a-chip applications, even in demanding radiation environments. However, funding agencies DTRA, AIM, and DARPA did not have any funds available to support the required follow-on technology development projects that would have been required to develop functioning prototype circuits, nor were such funds available from LDRD nor from other DOE program funds.

Physical Description

25 p.

Notes

INIS; OSTI as DE00750886

Medium: P; Size: 25 pages

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  • Other Information: PBD: 1 Jan 2000

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  • Report No.: SAND2000-0218
  • Grant Number: AC04-94AL85000
  • DOI: 10.2172/750886 | External Link
  • Office of Scientific & Technical Information Report Number: 750886
  • Archival Resource Key: ark:/67531/metadc710895

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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  • January 1, 2000

Added to The UNT Digital Library

  • Sept. 12, 2015, 6:31 a.m.

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  • April 10, 2017, 6:17 p.m.

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MYERS,DAVID R.; JESSING,JEFFREY R.; SPAHN,OLGA B. & SHANEYFELT,MARTY R. LDRD Final Report - Investigations of the impact of the process integration of deposited magnetic films for magnetic memory technologies on radiation-hardened CMOS devices and circuits - LDRD Project (FY99), report, January 1, 2000; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc710895/: accessed December 12, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.