Absolute intensities of the vacuum ultraviolet spectra in oxide etch plasma processing discharges

PDF Version Also Available for Download.

Description

In this paper, the authors report the absolute intensities of ultraviolet light between 4.9 eV and 24 eV ( 250 nm to 50 mn ) striking a silicon wafer in a number of oxide-etch processing discharges. The emphasis is on photons with energies greater than 8.8 eV, which have enough energy to damage SiO{sub 2}. These discharges were in an inductively-driven Gaseous Electronics Conference reference cell which had been modified to more closely resemble commercial etching tools. Comparisons of measurements made through a side port in the cell and through a hole in the wafer indicate that the VUV light ... continued below

Physical Description

41 p.

Creation Information

WOODWORTH,JOSEPH R.; RILEY,MERLE E.; AMATUCCI,VINCENT A.; HAMILTON,THOMAS W. & ARAGON,BEN P. May 1, 2000.

Context

This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 14 times . More information about this article can be viewed below.

Who

People and organizations associated with either the creation of this article or its content.

Sponsor

Publisher

  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)
    Place of Publication: Albuquerque, New Mexico

Provided By

UNT Libraries Government Documents Department

Serving as both a federal and a state depository library, the UNT Libraries Government Documents Department maintains millions of items in a variety of formats. The department is a member of the FDLP Content Partnerships Program and an Affiliated Archive of the National Archives.

Contact Us

What

Descriptive information to help identify this article. Follow the links below to find similar items on the Digital Library.

Description

In this paper, the authors report the absolute intensities of ultraviolet light between 4.9 eV and 24 eV ( 250 nm to 50 mn ) striking a silicon wafer in a number of oxide-etch processing discharges. The emphasis is on photons with energies greater than 8.8 eV, which have enough energy to damage SiO{sub 2}. These discharges were in an inductively-driven Gaseous Electronics Conference reference cell which had been modified to more closely resemble commercial etching tools. Comparisons of measurements made through a side port in the cell and through a hole in the wafer indicate that the VUV light in these discharges is strongly trapped. For the pure halocarbon gases examined in these experiments (C{sub 2}F{sub 6}, CHF{sub 3}, C{sub 4}F{sub 8}), the fluxes of VUV photons to the wafer varied from 1 x 10{sup 15} to 3 x 10{sup 15} photons/cm{sup 2} sec or equivalently from 1.5 to 5 mW/cm{sup 2}. These measurements imply that 0.1% to 0.3% of the rf source power to these discharges ends up hitting the wafer as VUV photons for the typical 20 mT, 200 W rf discharges. For typical ashing discharges containing pure oxygen, the VUV intensities are slightly higher--about 8 mW/cm{sup 2} . As argon or hydrogen diluents are added to the fluorocarbon gases, the VUV intensities increase dramatically, with a 10/10/10 mixture of Ar/C{sub 2}F{sub 6}/H{sub 2} yielding VUV fluxes on the wafer 26 mW/cm{sup 2} and pure argon discharges yielding 52 mW/cm{sup 2} . Adding an rf bias to the wafer had only a small effect on the VUV observed through a side-port of the GEC cell.

Physical Description

41 p.

Notes

OSTI as DE00755585

Medium: P; Size: 41 pages

Source

  • Journal Name: Journal of Vacuum Science and Technology; Other Information: Submitted to Journal of Vacuum Science and Technology

Language

Item Type

Identifier

Unique identifying numbers for this article in the Digital Library or other systems.

  • Report No.: SAND2000-1097J
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 755585
  • Archival Resource Key: ark:/67531/metadc710763

Collections

This article is part of the following collection of related materials.

Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

What responsibilities do I have when using this article?

When

Dates and time periods associated with this article.

Creation Date

  • May 1, 2000

Added to The UNT Digital Library

  • Sept. 12, 2015, 6:31 a.m.

Description Last Updated

  • April 12, 2017, 3:07 p.m.

Usage Statistics

When was this article last used?

Yesterday: 0
Past 30 days: 2
Total Uses: 14

Interact With This Article

Here are some suggestions for what to do next.

Start Reading

PDF Version Also Available for Download.

International Image Interoperability Framework

IIF Logo

We support the IIIF Presentation API

WOODWORTH,JOSEPH R.; RILEY,MERLE E.; AMATUCCI,VINCENT A.; HAMILTON,THOMAS W. & ARAGON,BEN P. Absolute intensities of the vacuum ultraviolet spectra in oxide etch plasma processing discharges, article, May 1, 2000; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc710763/: accessed December 18, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.