Characteristics of GaAsSb single quantum well lasers emitting near 1.3 {micro}m

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The authors report data on GaAsSb single quantum well lasers grown on GaAs substrates. Room temperature pulsed emission at 1.275 {micro}m in a 1,250 {micro}m-long device has been observed. Minimum threshold current densities of 535 A/cm{sup 2} were measured in 2000 {micro}m long lasers. The authors also measured internal losses of 2--5 cm{sup {minus}1}, internal quantum efficiencies of 30-38% and characteristic temperature T{sub 0} of 67--77 C. From these parameters a gain constant G{sub 0} of 1,660 cm{sup {minus}1} and a transparency current density J{sub tr} of 134 A/cm{sup 2} were calculated. The results indicate the potential for fabricating 1.3 ... continued below

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15 p.

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SPAHN,OLGA B. & KLEM,JOHN F. February 17, 2000.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA
    Place of Publication: Albuquerque, New Mexico

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The authors report data on GaAsSb single quantum well lasers grown on GaAs substrates. Room temperature pulsed emission at 1.275 {micro}m in a 1,250 {micro}m-long device has been observed. Minimum threshold current densities of 535 A/cm{sup 2} were measured in 2000 {micro}m long lasers. The authors also measured internal losses of 2--5 cm{sup {minus}1}, internal quantum efficiencies of 30-38% and characteristic temperature T{sub 0} of 67--77 C. From these parameters a gain constant G{sub 0} of 1,660 cm{sup {minus}1} and a transparency current density J{sub tr} of 134 A/cm{sup 2} were calculated. The results indicate the potential for fabricating 1.3 {micro}m VCSELs from these materials.

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15 p.

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OSTI as DE00751357

Medium: P; Size: 15 pages

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  • Journal Name: Photonics Technology Letters; Other Information: Submitted to Photonics Technology Letters

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  • Report No.: SAND2000-0458J
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 751357
  • Archival Resource Key: ark:/67531/metadc710656

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  • February 17, 2000

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  • Sept. 12, 2015, 6:31 a.m.

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  • April 7, 2017, 2:57 p.m.

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SPAHN,OLGA B. & KLEM,JOHN F. Characteristics of GaAsSb single quantum well lasers emitting near 1.3 {micro}m, article, February 17, 2000; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc710656/: accessed October 17, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.