Characterization of oxynitride dielectric films grown in NO/O{sub 2} mixtures by rapid thermal oxynitridation

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Ultra-thin oxynitride films were grown on Si by direct rapid thermal processing (RTP) oxynitridation in NO/O{sub 2} ambients with NO concentrations from 5% to 50%. During oxynitridation, nitrogen accumulated at the Si/dielectric interface and the average concentration of in N through the resulting films ranged from 0.3 to 3.0 atomic percent. The average concentration of N in the films increased with increasing NO in the ambient gas, but decreased with longer RTP times. The maximum N concentration remained relatively constant for all RTP times and a given NO/O{sub 2} ambient. Re-oxidation following oxynitridation altered L the N profile and improved ... continued below

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11 p.

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EVERIST,SARAH C.; MEISENHEIMER,TIMOTHY L.; NELSON,GERALD C. & SMITH,PAUL M. February 29, 2000.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)
    Place of Publication: Albuquerque, New Mexico

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Ultra-thin oxynitride films were grown on Si by direct rapid thermal processing (RTP) oxynitridation in NO/O{sub 2} ambients with NO concentrations from 5% to 50%. During oxynitridation, nitrogen accumulated at the Si/dielectric interface and the average concentration of in N through the resulting films ranged from 0.3 to 3.0 atomic percent. The average concentration of N in the films increased with increasing NO in the ambient gas, but decreased with longer RTP times. The maximum N concentration remained relatively constant for all RTP times and a given NO/O{sub 2} ambient. Re-oxidation following oxynitridation altered L the N profile and improved the electrical characteristics, with an optimal NO/O{sub 2} mixture in the range of 10% to 25% NO. Re-oxidation by RTP improves the electrical characteristics with respect to the films that were not re-oxidized and produces only slight changes in the N distribution or maximum concentration. The electrical results also indicate that oxynitride films are superior to comparably grown oxide films.

Physical Description

11 p.

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OSTI as DE00752159

Medium: P; Size: 11 pages

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  • 197th Meeting of the Electrochemical Society/Fourth International Symposium on the Physics and Chemistry of SiO2 and the SiO2 Interface, Toronto, Ontario (CA), 05/14/2000--05/19/2000

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  • Report No.: SAND2000-0507C
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 752159
  • Archival Resource Key: ark:/67531/metadc710652

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  • February 29, 2000

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  • Sept. 12, 2015, 6:31 a.m.

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  • April 6, 2017, 7:24 p.m.

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EVERIST,SARAH C.; MEISENHEIMER,TIMOTHY L.; NELSON,GERALD C. & SMITH,PAUL M. Characterization of oxynitride dielectric films grown in NO/O{sub 2} mixtures by rapid thermal oxynitridation, article, February 29, 2000; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc710652/: accessed September 21, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.