Method for mapping charge pulses in semiconductor radiation detectors

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An efficient method for determining the distribution of charge pulses produced by semiconductor detectors is presented. The method is based on a quasi-steady-state model for semiconductor detector operation. A complete description of the model and underlying assumptions is given. Mapping of charge pulses is accomplished by solving an adjoint carrier continuity equation. The solution of the adjoint equation yields Green`s function, a time- and position-dependent map that contains all possible charge pulses that can be produced by the detector for charge generated at discrete locations (e.g., by gamma-ray interactions). Because the map is generated by solving a single, time-dependent problem, ... continued below

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16 p.

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Prettyman, T.H. December 1, 1998.

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Description

An efficient method for determining the distribution of charge pulses produced by semiconductor detectors is presented. The method is based on a quasi-steady-state model for semiconductor detector operation. A complete description of the model and underlying assumptions is given. Mapping of charge pulses is accomplished by solving an adjoint carrier continuity equation. The solution of the adjoint equation yields Green`s function, a time- and position-dependent map that contains all possible charge pulses that can be produced by the detector for charge generated at discrete locations (e.g., by gamma-ray interactions). Because the map is generated by solving a single, time-dependent problem, the potential for reduction in computational effort over direct mapping methods is significant, particularly for detectors with complex electrode structures. In this paper, the adjoint equation is derived and the mapping method is illustrated for a simple case.

Physical Description

16 p.

Notes

INIS; OSTI as DE99000663

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  • 9. symposium on radiation measurements and applications, Ann Arbor, MI (United States), 11-14 May 1998

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  • Other: DE99000663
  • Report No.: LA-UR--98-1740
  • Report No.: CONF-980545--
  • Grant Number: W-7405-ENG-36
  • Office of Scientific & Technical Information Report Number: 677140
  • Archival Resource Key: ark:/67531/metadc710557

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Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • December 1, 1998

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  • Sept. 12, 2015, 6:31 a.m.

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  • May 5, 2016, 7:36 p.m.

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Prettyman, T.H. Method for mapping charge pulses in semiconductor radiation detectors, article, December 1, 1998; New Mexico. (digital.library.unt.edu/ark:/67531/metadc710557/: accessed April 24, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.