The nature and origin of lateral composition modulations in short-period strained-layer superlattices

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The nature and origin of lateral composition modulations in (AlAs){sub m}(InAs){sub n} short-period strained-layer superlattices (SPS) grown by molecular-beam epitaxy on InP substrates have been investigated by X-ray diffraction, atomic force microscopy, and transmission electron microscopy. Strong modulations were observed for growth temperatures between approximately 540 and 560 C. The maximum strength of modulations was found for SPS samples with InAs mole fraction x (= n/(n+m)) close to approximately 0.50 and when n is approximately equal to m approximately equal to 2. The modulations were suppressed at both high and low values of x. For x > 0.52 (global compression), ... continued below

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Norman, A. G.; Ahrenkiel, S. P.; Moutinho, H. R.; Ballif, C.; Al-Jassim, M. M.; Mascarenhas, A. et al. February 28, 2000.

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The nature and origin of lateral composition modulations in (AlAs){sub m}(InAs){sub n} short-period strained-layer superlattices (SPS) grown by molecular-beam epitaxy on InP substrates have been investigated by X-ray diffraction, atomic force microscopy, and transmission electron microscopy. Strong modulations were observed for growth temperatures between approximately 540 and 560 C. The maximum strength of modulations was found for SPS samples with InAs mole fraction x (= n/(n+m)) close to approximately 0.50 and when n is approximately equal to m approximately equal to 2. The modulations were suppressed at both high and low values of x. For x > 0.52 (global compression), the modulations were along the <100> directions in the (001) growth plane. For x < 0.52 (global tension), the modulations were along the two <310> directions rotated approximately {+-}27{degree} from [110] in the growth plane. The remarkably constant wavelength of the modulations, between approximately 20--30 nm, and the different modulation directions observed suggest that the origin of the modulations is due to surface roughening associated with the high misfit between the individual SPS layers and the InP substrate. Highly uniform unidirectional modulations have been grown by control of the InAs mole fraction and growth on suitably offcut substrates, which show great promise for application in device structures.

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  • Materials Research Society's Fall 1999 Meeting, Boston, MA (US), 11/29/1999--12/03/1999

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  • Report No.: NREL/CP-520-27811
  • Grant Number: AC36-99GO10337
  • Office of Scientific & Technical Information Report Number: 754732
  • Archival Resource Key: ark:/67531/metadc710456

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  • February 28, 2000

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  • Sept. 12, 2015, 6:31 a.m.

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  • March 31, 2016, 6:52 p.m.

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Norman, A. G.; Ahrenkiel, S. P.; Moutinho, H. R.; Ballif, C.; Al-Jassim, M. M.; Mascarenhas, A. et al. The nature and origin of lateral composition modulations in short-period strained-layer superlattices, article, February 28, 2000; Golden, Colorado. (digital.library.unt.edu/ark:/67531/metadc710456/: accessed August 22, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.