In situ study of dislocation behavior in columnar Al thin film on Si substrate during thermal cycling

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In situ transmission electron microscopy (150 kV) has been employed to study the evolution of dislocation microstructure during relatively rapid thermal cycling of a 200 nm Al thin film on Si substrate. After a few thermal cycles between 150 and 500 C, nearly stable Al columnar grain structure is established with average grain less than a {micro}m. On rapid cooling (3--30+ C/s) from 500 C, dislocations first appear at a nominal temperature of 360--380 C, quickly multiplying and forming planar glide plane arrays on further cooling. From a large number of such experiments the authors have attempted to deduce the ... continued below

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9 p.

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Allen, C. W.; Schroeder, H. & Hiller, J. M. December 13, 1999.

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In situ transmission electron microscopy (150 kV) has been employed to study the evolution of dislocation microstructure during relatively rapid thermal cycling of a 200 nm Al thin film on Si substrate. After a few thermal cycles between 150 and 500 C, nearly stable Al columnar grain structure is established with average grain less than a {micro}m. On rapid cooling (3--30+ C/s) from 500 C, dislocations first appear at a nominal temperature of 360--380 C, quickly multiplying and forming planar glide plane arrays on further cooling. From a large number of such experiments the authors have attempted to deduce the dislocation evolution during thermal cycling in these polycrystalline Al films and to account qualitatively for the results on a simple dislocation model.

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9 p.

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OSTI as DE00750626

Medium: P; Size: 9 pages

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  • MRS '99 Fall Meeting, Boston, MA (US), 11/29/1999--12/03/1999

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  • Report No.: ANL/MSD/CP-100695
  • Grant Number: W-31109-ENG-38
  • Office of Scientific & Technical Information Report Number: 750626
  • Archival Resource Key: ark:/67531/metadc710351

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  • December 13, 1999

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  • Sept. 12, 2015, 6:31 a.m.

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  • April 11, 2017, 8:18 p.m.

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Allen, C. W.; Schroeder, H. & Hiller, J. M. In situ study of dislocation behavior in columnar Al thin film on Si substrate during thermal cycling, article, December 13, 1999; Illinois. (digital.library.unt.edu/ark:/67531/metadc710351/: accessed December 18, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.