Spontaneous Pattern Formation on Ion Bombarded Si(001)

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Description

Pattern formation on surfaces undergoing low-energy ion bombardment is a common phenomenon. Here, a recently developed in situ spectroscopic light scattering technique was used to monitor periodic ripple evolution on Si(001) during Ar(+) sputtering. Analysis of the rippling kinetics indicated that under high flux sputtering at low temperatures the concentration of mobile species on the surface is saturated, and, surprisingly, is both temperature and ion flux independent. This is due to an effect of ion collision cascades on the concentration of mobile species. This new understanding of surface dynamics during sputtering allowed us to measure straighforwardly the activation energy for ... continued below

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14 Pages

Creation Information

Chason, Eric; Erlebacher, Jonah, Aziz, Michael J.; Floro, Jerrold A. & Sinclair, Michael B. April 26, 1999.

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This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this article can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA
    Place of Publication: Albuquerque, New Mexico

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Description

Pattern formation on surfaces undergoing low-energy ion bombardment is a common phenomenon. Here, a recently developed in situ spectroscopic light scattering technique was used to monitor periodic ripple evolution on Si(001) during Ar(+) sputtering. Analysis of the rippling kinetics indicated that under high flux sputtering at low temperatures the concentration of mobile species on the surface is saturated, and, surprisingly, is both temperature and ion flux independent. This is due to an effect of ion collision cascades on the concentration of mobile species. This new understanding of surface dynamics during sputtering allowed us to measure straighforwardly the activation energy for atomic migration on the surface to be 1.2+0.1 eV. The technique is generalizable to any material, including high temperature and insulating materials for which surface migration energies are notoriously difficult to measure.

Physical Description

14 Pages

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  • Journal Name: Physical Review Letters

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  • Other: DE00007026
  • Report No.: SAND99-1052J
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 7026
  • Archival Resource Key: ark:/67531/metadc710172

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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Creation Date

  • April 26, 1999

Added to The UNT Digital Library

  • Sept. 12, 2015, 6:31 a.m.

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  • Dec. 7, 2016, 9:36 p.m.

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Chason, Eric; Erlebacher, Jonah, Aziz, Michael J.; Floro, Jerrold A. & Sinclair, Michael B. Spontaneous Pattern Formation on Ion Bombarded Si(001), article, April 26, 1999; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc710172/: accessed April 19, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.