Compliant substrate technology for dissimilar epitaxy

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Description

Strained-layer semiconductor films offer tremendous potential with regards to optoelectronic applications for high speed communications, mobile communications, sensing, and novel logic devices. It is an unfortunate reality that many of the possible film/substrate combinations that could be exploited technologically are off limits because of large differences in lattice parameters, chemical compatibilities, or thermal expansion rates. These mechanical, chemical, and thermal incompatibilities manifest themselves primarily in terms of lattice defects such as dislocations and antiphase boundaries, and in some cases through enhanced surface roughness. An additional limitation, from a production point of view, is money. Device manufacturers as a rule want ... continued below

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25 p.

Creation Information

FLORO,JERROLD A.; LEE,STEPHEN R.; FOLLSTAEDT,DAVID M. & KLEM,JOHN F. March 1, 2000.

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This report is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 11 times . More information about this report can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

Strained-layer semiconductor films offer tremendous potential with regards to optoelectronic applications for high speed communications, mobile communications, sensing, and novel logic devices. It is an unfortunate reality that many of the possible film/substrate combinations that could be exploited technologically are off limits because of large differences in lattice parameters, chemical compatibilities, or thermal expansion rates. These mechanical, chemical, and thermal incompatibilities manifest themselves primarily in terms of lattice defects such as dislocations and antiphase boundaries, and in some cases through enhanced surface roughness. An additional limitation, from a production point of view, is money. Device manufacturers as a rule want the cheapest substrate possible. Freeing the heteroepitaxial world of the bonds of (near) lattice matching would vastly expand the types of working devices that could be grown. As a result, a great deal of effort has been expended finding schemes to integrate dissimilar film/substrate materials while preserving the perfection of the film layer. One such scheme receiving significant attention lately is the so-called compliant substrate approach.

Physical Description

25 p.

Notes

OSTI as DE00753377

Medium: P; Size: 25 pages

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  • Other Information: PBD: 1 Mar 2000

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  • Report No.: SAND2000-0754
  • Grant Number: AC04-94AL85000
  • DOI: 10.2172/753377 | External Link
  • Office of Scientific & Technical Information Report Number: 753377
  • Archival Resource Key: ark:/67531/metadc710061

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • March 1, 2000

Added to The UNT Digital Library

  • Sept. 12, 2015, 6:31 a.m.

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  • April 10, 2017, 6:05 p.m.

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FLORO,JERROLD A.; LEE,STEPHEN R.; FOLLSTAEDT,DAVID M. & KLEM,JOHN F. Compliant substrate technology for dissimilar epitaxy, report, March 1, 2000; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc710061/: accessed November 13, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.