High energy implantation with high-charge-state ions in a vacuum arc ion implanter Metadata

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Title

  • Main Title High energy implantation with high-charge-state ions in a vacuum arc ion implanter

Creator

  • Author: Oks, E. M.
    Creator Type: Personal
    Creator Info: Russian Academy of Sciences, Tomsk (Russian Federation). High Current Electronics Inst.
  • Author: Anders, A.
    Creator Type: Personal
  • Author: Brown, I. G.
    Creator Type: Personal
  • Author: Dickinson, M. R.
    Creator Type: Personal
  • Author: MacGill, R. A.
    Creator Type: Personal
    Creator Info: Lawrence Berkeley National Lab., CA (United States). Accelerator and Fusion Research Div.

Contributor

  • Sponsor: United States. Department of Energy. Office of Energy Research.
    Contributor Type: Organization
    Contributor Info: USDOE Office of Energy Research, Washington, DC (United States)
  • Sponsor: Electric Power Research Institute
    Contributor Type: Organization
    Contributor Info: Electric Power Research Inst., Palo Alto, CA (United States)

Publisher

  • Name: Lawrence Berkeley National Lab., Accelerator and Fusion Research Div., Berkeley, CA (United States)
    Place of Publication: United States

Date

  • Creation: 1996-08-01

Language

  • English

Description

  • Content Description: Ion implantation energy can in principal be increased by increasing the charge states of the ions produced by the ion source rather than by increasing the implanter operating voltage, providing an important savings in cost and size of the implanter. In some recent work the authors have shown that the charge states of metal ions produced in a vacuum arc ion source can be elevated by a strong magnetic field. In general, the effect of both high arc current and high magnetic field is to push the distribution to higher charge states--the mean ion charge state is increased and new high charge states are formed. The effect is significant for implantation application--the mean ion energy can be about doubled without change in extraction voltage. Here they describe the ion source modifications, the results of time-of-flight measurements of ion charge state distributions, and discuss the use and implications of this technique as a means for doing metal iron implantation in the multi-hundreds of keV ion energy range.
  • Physical Description: 12 p.

Subject

  • Keyword: Ion Sources
  • Keyword: Charge States
  • Keyword: Magnetic Fields
  • Keyword: Ion Implantation
  • STI Subject Categories: 36 Materials Science
  • Keyword: Metals
  • Keyword: Materials
  • Keyword: Design
  • Keyword: Beam Extraction

Source

  • Conference: IBMM `96: 10. international conference on ion beam modification of materials, Albuquerque, NM (United States), 1-6 Sep 1996

Collection

  • Name: Office of Scientific & Technical Information Technical Reports
    Code: OSTI

Institution

  • Name: UNT Libraries Government Documents Department
    Code: UNTGD

Resource Type

  • Article

Format

  • Text

Identifier

  • Other: DE98058295
  • Report No.: LBL--38513
  • Report No.: CONF-960994--
  • Grant Number: AC03-76SF00098
  • Office of Scientific & Technical Information Report Number: 663255
  • Archival Resource Key: ark:/67531/metadc709997

Note

  • Display Note: OSTI as DE98058295
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