AlGaAs/InGaAlP tunnel junctions for multijunction solar cells

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Optimization of GaInP{sub 2}/GaAs dual and GaInP{sub 2}/GaAs/Ge triple junction cells, and development of future generation monolithic multi-junction cells will involve the development of suitable high bandgap tunnel junctions. There are three criteria that a tunnel junction must meet. First, the resistance of the junction must be kept low enough so that the series resistance of the overall device is not increased. For AMO, 1 sun operation, the tunnel junction resistance should be below 5 x 10{sup {minus}2} {Omega}-cm. Secondly, the peak current density for the tunnel junction must also be larger than the J{sub sc} of the cell so ... continued below

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3 p.

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SHARPS,P.R.; LI,N.Y.; HILLS,J.S.; HOU,H.; CHANG,PING-CHIH & BACA,ALBERT G. May 16, 2000.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA
    Place of Publication: Albuquerque, New Mexico

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Optimization of GaInP{sub 2}/GaAs dual and GaInP{sub 2}/GaAs/Ge triple junction cells, and development of future generation monolithic multi-junction cells will involve the development of suitable high bandgap tunnel junctions. There are three criteria that a tunnel junction must meet. First, the resistance of the junction must be kept low enough so that the series resistance of the overall device is not increased. For AMO, 1 sun operation, the tunnel junction resistance should be below 5 x 10{sup {minus}2} {Omega}-cm. Secondly, the peak current density for the tunnel junction must also be larger than the J{sub sc} of the cell so that the tunnel junction I-V curve does not have a deleterious effect on the I-V curve of the multi-junction device. Finally, the tunnel junction must be optically transparent, i.e., there must be a minimum of optical absorption of photons that will be collected by the underlying subcells. The paper reports the investigation of four high bandgap tunnel junctions grown by metal-organic chemical vapor deposition.

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3 p.

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OSTI as DE00756113

Medium: P; Size: 3 pages

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  • 28th IEEE Photovoltaic Specialists Conference, Anchorage, AK (US), 09/19/2000--09/22/2000

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  • Report No.: SAND2000-1234C
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 756113
  • Archival Resource Key: ark:/67531/metadc709931

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  • May 16, 2000

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  • Sept. 12, 2015, 6:31 a.m.

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  • April 10, 2017, 7:19 p.m.

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SHARPS,P.R.; LI,N.Y.; HILLS,J.S.; HOU,H.; CHANG,PING-CHIH & BACA,ALBERT G. AlGaAs/InGaAlP tunnel junctions for multijunction solar cells, article, May 16, 2000; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc709931/: accessed June 25, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.