Analysis of lateral mode behavior in broad-area InGaN quantum well lasers

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A wave-optical model that is coupled to a microscopic gain theory is used to investigate lateral mode behavior in group III nitride quantum well lasers. Beam filamentation due to self-focusing in the gain medium is found to limit fundamental-mode output to narrow stripe lasers or to operation close to lasing threshold. Differences between nitride and conventional near-infrared semiconductor lasers arise because of band structure differences, in particular, the presence of a strong quantum-confined Stark effect in the former. Increasing mirror reflectivities in plane-plane resonators to reduce lasing threshold current tends to exacerbate the filamentation problem. On the other hand, a ... continued below

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30 p.

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CHOW,WENG W. & AMANO,H. June 1, 2000.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA
    Place of Publication: Albuquerque, New Mexico

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Description

A wave-optical model that is coupled to a microscopic gain theory is used to investigate lateral mode behavior in group III nitride quantum well lasers. Beam filamentation due to self-focusing in the gain medium is found to limit fundamental-mode output to narrow stripe lasers or to operation close to lasing threshold. Differences between nitride and conventional near-infrared semiconductor lasers arise because of band structure differences, in particular, the presence of a strong quantum-confined Stark effect in the former. Increasing mirror reflectivities in plane-plane resonators to reduce lasing threshold current tends to exacerbate the filamentation problem. On the other hand, a negative-branch unstable resonator is found to mitigate filament effects, enabling fundamental-mode operation far above threshold in broad-area lasers.

Physical Description

30 p.

Notes

OSTI as DE00756066

Medium: P; Size: 30 pages

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  • Journal Name: Journal of Quantum Electronics; Other Information: Submitted to Journal of Quantum Electronics

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  • Report No.: SAND2000-1397J
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 756066
  • Archival Resource Key: ark:/67531/metadc709928

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  • June 1, 2000

Added to The UNT Digital Library

  • Sept. 12, 2015, 6:31 a.m.

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  • April 12, 2017, 12:41 p.m.

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CHOW,WENG W. & AMANO,H. Analysis of lateral mode behavior in broad-area InGaN quantum well lasers, article, June 1, 2000; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc709928/: accessed April 24, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.