Basic mechanisms for the new millennium

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Description

This part of the Short Course will review the basic mechanisms for radiation effects in semiconductor devices. All three areas of radiation damage will be considered -- total dose, displacement effects, and single event effects. Each of these areas will be discussed in turn. First an overview and background will be provided on the historical understanding of the damage mechanism. Then there will be a discussion of recent enhancements to the understanding of those mechanisms and an up-to-date picture provided of the current state of knowledge. Next the potential impact of each of these damage mechanisms on devices in emerging ... continued below

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119 p.

Creation Information

Dressendorfer, P. V. September 1998.

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This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 62 times . More information about this article can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

This part of the Short Course will review the basic mechanisms for radiation effects in semiconductor devices. All three areas of radiation damage will be considered -- total dose, displacement effects, and single event effects. Each of these areas will be discussed in turn. First an overview and background will be provided on the historical understanding of the damage mechanism. Then there will be a discussion of recent enhancements to the understanding of those mechanisms and an up-to-date picture provided of the current state of knowledge. Next the potential impact of each of these damage mechanisms on devices in emerging technologies and how the mechanisms may be used to understand device performance will be described, with an emphasis on those likely to be of importance in the new millennium. Finally some additional thoughts will be presented on how device scaling expected into the next century may impact radiation hardness.

Physical Description

119 p.

Notes

INIS; OSTI as DE98005925

Source

  • IEEE nuclear and space radiation effects conference, Newport Beach, CA (United States), 20-24 Jul 1998

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  • Other: DE98005925
  • Report No.: SAND--98-1388C
  • Report No.: CONF-980705--
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 658465
  • Archival Resource Key: ark:/67531/metadc709802

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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  • September 1998

Added to The UNT Digital Library

  • Sept. 12, 2015, 6:31 a.m.

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  • Dec. 4, 2015, 10:16 p.m.

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Dressendorfer, P. V. Basic mechanisms for the new millennium, article, September 1998; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc709802/: accessed September 26, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.