Role of defects in III-nitride based electronics

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Description

The LDRD entitled ``Role of Defects in III-Nitride Based Devices'' is aimed to place Sandia National Laboratory at the forefront of the field of GaN materials and devices by establishing a scientific foundation in areas such as material growth, defect characterization/modeling, and processing (metalization and etching) chemistry. In this SAND report the authors summarize their studies such as (1) the MOCVD growth and doping of GaN and AlGaN, (2) the characterization and modeling of hydrogen in GaN, including its bonding, diffusion, and activation behaviors, (3) the calculation of energetic of various defects including planar stacking faults, threading dislocations, and point ... continued below

Physical Description

48 p.

Creation Information

HAN,JUNG; MYERS JR.,SAMUEL M.; FOLLSTAEDT,DAVID M.; WRIGHT,ALAN F.; CRAWFORD,MARY H.; LEE,STEPHEN R. et al. January 1, 2000.

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This report is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this report can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

The LDRD entitled ``Role of Defects in III-Nitride Based Devices'' is aimed to place Sandia National Laboratory at the forefront of the field of GaN materials and devices by establishing a scientific foundation in areas such as material growth, defect characterization/modeling, and processing (metalization and etching) chemistry. In this SAND report the authors summarize their studies such as (1) the MOCVD growth and doping of GaN and AlGaN, (2) the characterization and modeling of hydrogen in GaN, including its bonding, diffusion, and activation behaviors, (3) the calculation of energetic of various defects including planar stacking faults, threading dislocations, and point defects in GaN, and (4) dry etching (plasma etching) of GaN (n- and p-types) and AlGaN. The result of the first AlGaN/GaN heterojunction bipolar transistor is also presented.

Physical Description

48 p.

Notes

OSTI as DE00752017

Medium: P; Size: 48 pages

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  • Other Information: PBD: 1 Jan 2000

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  • Report No.: SAND2000-0182
  • Grant Number: AC04-94AL85000
  • DOI: 10.2172/752017 | External Link
  • Office of Scientific & Technical Information Report Number: 752017
  • Archival Resource Key: ark:/67531/metadc709725

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Creation Date

  • January 1, 2000

Added to The UNT Digital Library

  • Sept. 12, 2015, 6:31 a.m.

Description Last Updated

  • April 12, 2017, 7:08 p.m.

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HAN,JUNG; MYERS JR.,SAMUEL M.; FOLLSTAEDT,DAVID M.; WRIGHT,ALAN F.; CRAWFORD,MARY H.; LEE,STEPHEN R. et al. Role of defects in III-nitride based electronics, report, January 1, 2000; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc709725/: accessed September 23, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.