Correlation between nuclear response and defects in CZT Metadata

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Title

  • Main Title Correlation between nuclear response and defects in CZT

Creator

  • Author: Hermon, H.
    Creator Type: Personal
  • Author: Schieber, M.
    Creator Type: Personal
  • Author: James, R. B.
    Creator Type: Personal
  • Author: Lee, E.
    Creator Type: Personal
  • Author: Cross, E.
    Creator Type: Personal
  • Author: Goorsky, M.
    Creator Type: Personal
  • Author: Lam, T.
    Creator Type: Personal
  • Author: Schlesinger, T. E.
    Creator Type: Personal
  • Author: Greaves, M.
    Creator Type: Personal

Contributor

  • Sponsor: United States. Department of Energy.
    Contributor Type: Organization
    Contributor Info: US Department of Energy (United States)

Publisher

  • Name: Sandia National Laboratories
    Place of Publication: Albuquerque, New Mexico
    Additional Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)

Date

  • Creation: 1999-07-19

Language

  • English

Description

  • Content Description: Vertical high pressure Bridgman (VHPB) was considered until now to be the most successful crystal growth method to produce Cd{sub 1{minus}x}Zn{sub x}Te (CZT), (0.04 < x < 0.24), for X- and gamma-ray detector crystals. Recently Horizontal Bridgman (HB) Cd{sub 1{minus}x}Zn{sub x}Te crystals produced by IMARAD Co. have also been successfully fabricated into nuclear spectroscopic radiation detectors. In view of the database of many years' study of the electrical properties of VHPB CZT grown and obtained from various sources, the authors also studied the HB CZT crystals in order to compare the defects present in both different kinds of crystals grown by different methods. The VHB-grown samples were examined using thermoelectric emission spectroscopy (TEES), X- and gamma ray spectroscopy and laser induced transient charge technique (TCT). The surface and the bulk crystalline homogeneity were mapped using triaxial double crystal x-ray diffraction (TADXRD) and infrared transmission spectroscopy (IR). They have found a correlation between crystallinity, IR transmission microstructure and trapping times. Spectrometer grade VHPB CZT crystals exhibit trapping times of 20 {micro}s for electrons and 7 {micro}s for holes, however, regions, which were opaque to IR transmission, had trapping times shorter by one order of magnitude. The trapping times of HB CZT for electrons, were 10--15 {micro}s. A similar trend has been observed on VHPB CZT crystals with poor crystallinity. The HB CZT crystals that they measured in this study had a crystallinity that was inferior to that of the best spectroscopic grade VHPB crystals.
  • Physical Description: 11 p.

Subject

  • STI Subject Categories: 46 Instrumentation Related To Nuclear Science And Technology
  • Keyword: Semiconductor Detectors
  • Keyword: Zinc Tellurides
  • STI Subject Categories: 36 Materials Science
  • Keyword: Gamma Spectrometers
  • Keyword: Crystal Defects
  • Keyword: Bridgman Method
  • Keyword: Cadmium Tellurides
  • Keyword: X-Ray Spectrometers
  • Keyword: Trapping
  • Keyword: Electrical Properties

Source

  • Conference: International Symposium Optical Science and Technology, Denver, CO (US), 07/19/1999--07/23/1999

Collection

  • Name: Office of Scientific & Technical Information Technical Reports
    Code: OSTI

Institution

  • Name: UNT Libraries Government Documents Department
    Code: UNTGD

Resource Type

  • Article

Format

  • Text

Identifier

  • Report No.: SAND2000-8612C
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 755947
  • Archival Resource Key: ark:/67531/metadc709667

Note

  • Display Note: INIS; OSTI as DE00755947
  • Display Note: Medium: P; Size: 11 pages