Correlation between nuclear response and defects in CZT Page: 2 of 11
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Small sample Large sample
ront 9.416% 8.999%
The Zn content was determined by similar XRD and/or PL measurements for CZT having a minimal composition of 10%
Zn compared to VHPB crystals from 6-12% depending on the distance from the seed to the top of the grown crystal boule.
The HB crystals measured so far produced too small data base to make a comparison regarding the structural homogeneity
of the grown crystals.
2.2. Elemental chemical analysis
A CZT detector obtained from Imarad has been analyzed for its elemental impurities. The elemental analysis results were
compared with CZT samples obtained from Russia and from U.S. (see Fig 1). The Figure shows the elemental impurity
analysis measured on the Imarad HB CZT, using a glow discharge mass spectroscopy (GDMS) method. A comparison of
the elemental analysis results with the results measured on HPVB CZT grown in Russia and HPVB CZT grown in the U.S.
is given in Table 2. The most abundant impurities found in the HB CZT are In and Fe with 6 and 1 ppmw respectively; In
was probably introduced to the sample during the fabrication process. Other noticeable impurities are Li, Si, Se and Ag, The
concentrations of other impurities were in the range of 10-100 ppbw. About the same impurity level has also been found
also on the U.S. grown HPVB CZT using the laser ablation inductively coupled plasma (LA-ICP) method. The Russian
grown CZT, on the other hand, has a higher impurity level by one order of magnitude with a high level of Se (-2ppm).
Fig. 1. Elemental analysis of HB CZT
band gap semiconductors, however, it appears that the highly imperfect regions of the detectors do not respond to alpha
radiation and hole transport properties are difficult to quantify. In order to evaluate the electrical properties of those regions,
a much more intense source of energy is required to produce detectable electron hole pairs. One possible source is a pulsed
laser, which produces many orders of magnitude creating more charges in each pulse. Indeed, we applied the transient
charge technique, (TCT) method to study the trapping time of HB crystals, and compare them with the VIIPB crystals.
Finally, some preliminary data on thermoelectric voltage spectroscopy (TEVS) and thermal stimulated current, (TSC)
refits, l also be shown.
2. RESULTS AND DISCUSSION
The in content
the Zn content, x in HB Cdi1,ZnxTe crystals was determined by XRD using Vegard's law . Two samples were
measured: the thin sample was 3 mm thick and looked quite homogeneous. The thicker sample could only be measured
from the front side, so only one measurement was taken. The results are shown in Table 1.
Table 1. Zinc content in HB-CZT
Elemental analysis of HB CZT
Li B Na Mg AI Si P S C CaCr MnFe CoNi Cu AsSe AgSb Hg TIPbBi 1i
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Hermon, H.; Schieber, M.; James, R. B.; Lee, E.; Cross, E.; Goorsky, M. et al. Correlation between nuclear response and defects in CZT, article, July 19, 1999; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc709667/m1/2/: accessed September 24, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.