The technology and applications of selective oxidation of AlGaAs

PDF Version Also Available for Download.

Description

Wet oxidation of AlGaAs alloys, pioneered at the University of Illinois a decade ago, recently has been used to fabricate high performance vertical-cavity surface emitting lasers (VCSELs). The superior properties of oxide-confined VCSELs has stimulated interest in understanding the fundamental of wet oxidation. The authors briefly review the technology of selective oxidation of III-V alloys, including the oxide microstructure and oxidation processing as well as describe its application to selectively oxidized VCSELs.

Physical Description

5 p.

Creation Information

Choquette, K.D.; Geib, K.M.; Hou, H.Q.; Mathes, D. & Hull, R. August 1, 1998.

Context

This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 17 times . More information about this article can be viewed below.

Who

People and organizations associated with either the creation of this article or its content.

Authors

Sponsor

Provided By

UNT Libraries Government Documents Department

Serving as both a federal and a state depository library, the UNT Libraries Government Documents Department maintains millions of items in a variety of formats. The department is a member of the FDLP Content Partnerships Program and an Affiliated Archive of the National Archives.

Contact Us

What

Descriptive information to help identify this article. Follow the links below to find similar items on the Digital Library.

Description

Wet oxidation of AlGaAs alloys, pioneered at the University of Illinois a decade ago, recently has been used to fabricate high performance vertical-cavity surface emitting lasers (VCSELs). The superior properties of oxide-confined VCSELs has stimulated interest in understanding the fundamental of wet oxidation. The authors briefly review the technology of selective oxidation of III-V alloys, including the oxide microstructure and oxidation processing as well as describe its application to selectively oxidized VCSELs.

Physical Description

5 p.

Notes

OSTI as DE98006169

Source

  • 1998 semiconducting and insulating materials conference, Berkeley, CA (United States), 1 Jun 1998

Language

Item Type

Identifier

Unique identifying numbers for this article in the Digital Library or other systems.

  • Other: DE98006169
  • Report No.: SAND--98-0885C
  • Report No.: CONF-980687--
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 656770
  • Archival Resource Key: ark:/67531/metadc709636

Collections

This article is part of the following collection of related materials.

Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

What responsibilities do I have when using this article?

When

Dates and time periods associated with this article.

Creation Date

  • August 1, 1998

Added to The UNT Digital Library

  • Sept. 12, 2015, 6:31 a.m.

Description Last Updated

  • May 5, 2016, 8:17 p.m.

Usage Statistics

When was this article last used?

Yesterday: 0
Past 30 days: 1
Total Uses: 17

Interact With This Article

Here are some suggestions for what to do next.

Start Reading

PDF Version Also Available for Download.

International Image Interoperability Framework

IIF Logo

We support the IIIF Presentation API

Choquette, K.D.; Geib, K.M.; Hou, H.Q.; Mathes, D. & Hull, R. The technology and applications of selective oxidation of AlGaAs, article, August 1, 1998; United States. (digital.library.unt.edu/ark:/67531/metadc709636/: accessed December 10, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.