Effect of Mg ionization efficiency on performance of Npn AlGaN/GaN heterojunction bipolar transistors

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A drift-diffusion transport model has been used to examine the performance capabilities of AlGaN/GaN Npn heterojunction bipolar transistors (HBTs). The Gummel plot from the first GaN-based HBT structure recently demonstrated is adjusted with simulation by using experimental mobility and lifetime reported in the literature. Numerical results have been explored to study the effect of the p-type Mg doping and its incomplete ionization in the base. The high base resistance induced by the deep acceptor level is found to be the cause of limiting current gain values. Increasing the operating temperature of the device activates more carriers in the base. An ... continued below

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12 p.

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MONIER,C.; PEARTON,S.J.; CHANG,PING-CHIH & BACA,ALBERT G. March 10, 2000.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

A drift-diffusion transport model has been used to examine the performance capabilities of AlGaN/GaN Npn heterojunction bipolar transistors (HBTs). The Gummel plot from the first GaN-based HBT structure recently demonstrated is adjusted with simulation by using experimental mobility and lifetime reported in the literature. Numerical results have been explored to study the effect of the p-type Mg doping and its incomplete ionization in the base. The high base resistance induced by the deep acceptor level is found to be the cause of limiting current gain values. Increasing the operating temperature of the device activates more carriers in the base. An improvement of the simulated current gain by a factor of 2 to 4 between 25 and 300 C agrees well with the reported experimental results. A preliminary analysis of high frequency characteristics indicates substantial progress of predicted rf performances by operating the device at higher temperature due to a reduced extrinsic base resistivity.

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12 p.

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OSTI as DE00752089

Medium: P; Size: 12 pages

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  • Journal Name: Applied Physics Letters; Other Information: Submitted to Applied Physics Letters

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  • Report No.: SAND2000-0627J
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 752089
  • Archival Resource Key: ark:/67531/metadc709598

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  • March 10, 2000

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  • Sept. 12, 2015, 6:31 a.m.

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  • April 6, 2017, 7:58 p.m.

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MONIER,C.; PEARTON,S.J.; CHANG,PING-CHIH & BACA,ALBERT G. Effect of Mg ionization efficiency on performance of Npn AlGaN/GaN heterojunction bipolar transistors, article, March 10, 2000; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc709598/: accessed October 20, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.