High rate dry etching of GaN, AlN and InN in ECR Cl{sub 2}/CH{sub 4}/H{sub 2}/Ar plasmas

PDF Version Also Available for Download.

Description

Etch rates for binary nitrides in ECR Cl{sub 2}/CH{sub 4}/H{sub 2}/Ar are reported as a function of temperature, rf-bias, microwave power, pressure and relative gas proportions. GaN etch rates remain relatively constant from 30 to 125{degrees}C and then increase to a maximum of 2340 {angstrom}-min{sup {minus}1} at 170{degrees}C. The AlN etch rate decreases throughout the temperature range studied with a maximum of 960 {angstrom}-min{sup {minus}1} at 30{degrees}C. When CH{sub 4} is removed from the plasma chemistry, the GaN and InN etch rates are slightly lower, with less dramatic changes with temperature. The surface composition of the III-V nitrides remains unchanged ... continued below

Physical Description

6 p.

Creation Information

Vartuli, C.B.; Pearton, S.J.; Abernathy, C.R.; Shul, R.J.; Kilcoyne, S.P.; Crawford, M.H. et al. May 1, 1995.

Context

This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 63 times . More information about this article can be viewed below.

Who

People and organizations associated with either the creation of this article or its content.

Authors

Sponsors

Publisher

  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

Provided By

UNT Libraries Government Documents Department

Serving as both a federal and a state depository library, the UNT Libraries Government Documents Department maintains millions of items in a variety of formats. The department is a member of the FDLP Content Partnerships Program and an Affiliated Archive of the National Archives.

Contact Us

What

Descriptive information to help identify this article. Follow the links below to find similar items on the Digital Library.

Description

Etch rates for binary nitrides in ECR Cl{sub 2}/CH{sub 4}/H{sub 2}/Ar are reported as a function of temperature, rf-bias, microwave power, pressure and relative gas proportions. GaN etch rates remain relatively constant from 30 to 125{degrees}C and then increase to a maximum of 2340 {angstrom}-min{sup {minus}1} at 170{degrees}C. The AlN etch rate decreases throughout the temperature range studied with a maximum of 960 {angstrom}-min{sup {minus}1} at 30{degrees}C. When CH{sub 4} is removed from the plasma chemistry, the GaN and InN etch rates are slightly lower, with less dramatic changes with temperature. The surface composition of the III-V nitrides remains unchanged over the temperatures studied. The GaN and InN rates increase significantly with rf power, and the fastest rates for all three binaries are obtained at 2 mTorr. Surface morphology is smooth for GaN over a wide range of conditions, whereas InN surfaces are more sensitive to plasma parameters.

Physical Description

6 p.

Notes

OSTI as DE95011872

Source

  • Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 17-21 Apr 1995

Language

Item Type

Identifier

Unique identifying numbers for this article in the Digital Library or other systems.

  • Other: DE95011872
  • Report No.: SAND--95-0936C
  • Report No.: CONF-950412--12
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 67760
  • Archival Resource Key: ark:/67531/metadc709474

Collections

This article is part of the following collection of related materials.

Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

What responsibilities do I have when using this article?

When

Dates and time periods associated with this article.

Creation Date

  • May 1, 1995

Added to The UNT Digital Library

  • Sept. 12, 2015, 6:31 a.m.

Description Last Updated

  • Aug. 23, 2016, 3:33 p.m.

Usage Statistics

When was this article last used?

Yesterday: 0
Past 30 days: 0
Total Uses: 63

Interact With This Article

Here are some suggestions for what to do next.

Start Reading

PDF Version Also Available for Download.

International Image Interoperability Framework

IIF Logo

We support the IIIF Presentation API

Vartuli, C.B.; Pearton, S.J.; Abernathy, C.R.; Shul, R.J.; Kilcoyne, S.P.; Crawford, M.H. et al. High rate dry etching of GaN, AlN and InN in ECR Cl{sub 2}/CH{sub 4}/H{sub 2}/Ar plasmas, article, May 1, 1995; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc709474/: accessed October 19, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.